KTC3876

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES Complementary To KTA1505. Excellent HFE Linearity. Low noise. Production specification KTC3876 Pb Lead-free APPLICATIONS General purpose application, switching application. SOT-23 ORDERING INFORMATION Type No. KTC3876 Marking WO▪/WY▪/WG▪ Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Value 35 30 5 500 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC057 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=35V,IE=0 VEB=5V,IC=0 VCE=1V,IC=100mA DC current gain hFE VCE=6V,IC=400mA O Y Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob IC=100mA, IB=10mA VCE=6V, IC= 20mA VCB=6V,IE=0,f=1MHz Production specification KTC3876 MIN 35 30 5 0.1 0.1 70 25 40 0.25 300 7 V MHz pF 400 TYP MAX UNIT V V V μA μA CLASSIFICATION Rank Range Marking OF hFE O 70-140 WO Y 120-240 WY G 200-400 WG Document number: BL/SSSTC057 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification KTC3876 SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device KTC3876 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC057 Rev.A www.galaxycn.com 3