0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
KTD1304

KTD1304

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    KTD1304 - NPN Silicon Epitaxial Planar Transistor - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
KTD1304 数据手册
BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES High emitter-base voltage. High reverse hFE. Low on resistance. Production specification KTD1304 Pb Lead-free APPLICATIONS Audio muting application. ORDERING INFORMATION Type No. KTD1304 Marking MAX SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC IB PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Power Dissipation Junction and Storage Temperature Value 25 20 12 300 30 200 -55~150 Units V V V mA mA mW ℃ Document number: BL/SSSTC113 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification KTD1304 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=25V,IE=0 VEB=12V,IC=0 VCE=2V,IC=4mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC= 1mA VCB=10V,IE=0,f=1MHz 60 10 200 MIN 25 20 12 0.1 0.1 800 0.25 1 V V MHz pF TYP MAX UNIT V V V μA μA TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC113 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification KTD1304 PACKAGE OUTLINE Plastic surface mounted package A E SOT-23 SOT-23 Dim A B C D E G H H C Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J J K 0.1Typical All Dimensions in mm Document number: BL/SSSTC113 Rev.A www.galaxycn.com 3 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor SOLDERING FOOTPRINT Production specification KTD1304 Unit : mm PACKAGE Device KTD1304 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC113 Rev.A www.galaxycn.com 4
KTD1304 价格&库存

很抱歉,暂时无法提供与“KTD1304”相匹配的价格&库存,您可以联系我们找货

免费人工找货