LL103B

BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE FEATURES For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications LL103A - - - LL103C VOLTAGE RANGE: 40 -- 20 V CURRENT: 400 mW MINI-MELF Cathode indification φ .5±0.1 1 3.4 +0.3 -0.1 0.4±0.1 MECHANICAL DATA Case:JEDEC MINI-MELF Polarity: Color band denotes cathode end Weight: Approx. 0.031 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Single cycle surge 60Hz sine w ave Forward continuous current LL103A 40 LL103B 30 4001) 15 LL103C 20 UNITS V mW A VRRM Ptot I FSM I(AV) 200 125 -55 ---+ 150 mA Junction tenperature Storage temperature range TJ TSTG 1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Symbols Reverse breakdow n voltage @ IR=50 A LL103A Min. 40 30 20 - Typ. 50 10 250 Max. 5.0 0.37 0.6 - UNITS V μA V pF LL103B LL103C VR IR VF CJ trr RθJA Leakage current @ VR=50V LL103A,VR=30V LL103B,VR=20V LL103C,VR=10V Forw ard voltage drop @ I F=20mA I F=200mA Junction capacitance @ VR=0V,f=1MHz Reverse recovery time @ IF=IR=50mA to 200mA,recover to 0.1 IR Thermal resistance junction to ambient air ns K/W www.galaxycn.com Document Number 0265018 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES LL103A - - - LL103C FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD. XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXXXXX-SCHOTTKY BARRIER FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF XXXXX COMBINATION SCHOTTKY BARRIER AND PN XXXXX JUNCTION GUARD RING 1000 1000.000 100 100.000 I F – Forward Current ( mA) 5 – Forward Current (A) F 4 3 2 1 0 0.0 10 10.000 1 1.000 0.100 0.1 0.010 0.01 0.001 0 100 200 300 400 500 600 700 800 900 1000 V F – Forward Voltage ( mV ) I 0.5 1.0 1.5 2.0 V F – Forward Voltage ( V ) FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT XXXXXXXXX VARIATION TEMPERATURES FIG.4 -- TYPICAL CAPACITANCE CURVE AS A JUNCTION OF REVERSE VOLTAGE 10000 CD – Diode Capacitance ( pF ) I R – Reverse Current (A ) 30 f=1MHz 25 20 15 10 5 0 1000 100 10 1 0 20 100 120 140 160 Tj – Junction Temperature ( °C ) 40 60 80 0 5 10 15 20 25 30 V R – Reverse V oltage ( V ) www.galaxycn.com Document Number 0265018 BLGALAXY ELECTRICAL 2.