LL4150

BL FEATURES GALAXY ELECTRICAL LL4150 VOLTAGE RANGE: 50 V CURRENT: 300 m A MINI-MELF SMALL SIGNAL SWITCHING DIODE ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation Cathode indification φ .5±0.1 1 3.4 +0.3 -0.1 0.4±0.1 MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. MAXIMUM RATINGS LL4150 Reverse voltage Peak reverse voltage Average forward rectified current VR=0V Forward surge current at t=1µs Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature range VR VRM IO IFSM Ptot Rthja Tj TSTG 50 50 300 4.0 500 350 175 -65 --- + 175 UNITS V V mA A mW K/W ℃ ℃ ELECTRICAL CHARACTERISTICS MIN. Forward voltage at IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA Leakage current @VR=50V,TJ=25℃ VR=50V,TJ=150℃ Capacitance at VR=0V,f=1MHZ,VHF=50mV Reverse recovery time IF=IR=(10to100mA),iR=0.1×IR RL=100Ω www.galaxycn.com MAX. 0.62 0.74 0.86 0.92 1.0 0.1 100 2.5 4.0 UNITS 0.54 0.66 VF 0.76 0.82 0.87 IR Ctot trr - V µA pF ns Document Number 0268024 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE LL4150 FIG.2 -- FORWARD CHARACTERISTICS mW 1000 900 800 mA 10 3 10 2 Ptot 700 600 500 400 300 200 100 0 0 100 200℃ I F 10 T J =25 1 10 -1 TA 10 -2 0 0.5 VF 1V FIG.3 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 10 4 10 3 10 2 10 V R =50V 1 0 10 0 20 0 ℃ www.galaxycn.com Document Number 0268024 BLGALAXY ELECTRICAL 2.