BL GALAXY ELECTRICAL
SMALL SIGNAL SCHOTTKY DIODE
FEATURES
For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications
LL45
VOLTAGE RANGE: 15 V CURRENT: 30 mA
MINI-MELF
Cathode indification φ .5±0.1 1 3.4 +0.3 -0.1 0.4±0.1
MECHANICAL DATA
Case:JEDEC MINI-MELF,glass case Polarity: Color band denotes cathode end Weight: Approx 0.031 grams
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak reverse voltage Forward continuous current Surge non repetitive forward current tp≤1s Junction tenperature Storage temperature range 1)Valid provided that electrodes are kept at ambient temperature.
Value
15 30 60 125 c-55 ---+ 150
UNITS
V mA mA
VRRM IF IFSM TJ TSTG
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Reverse breakdown voltage Leakage current @ VR=6V @ I F=1.0mA @ IR=10 A
Min.
15
Typ.
Max.
UNITS
V
VR IR
100 0.38
nA
Forw ard voltage drop
Test pulse:tp≤300µ s, <2% I F=10mA δ IF=30mA
VF
0.5 1.0
V
Junction capacitance
@ VR=1.0V,f=1MHz
CJ RθJA
1.1 400
pF K/W
Termal resistance junction to ambient air
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Document Number 0265024
BLGALAXY ELECTRICAL
1.
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