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LL5711

LL5711

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    LL5711 - SMALL SIGNAL SCHOTTKY DIODES - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
LL5711 数据手册
BL FEATURES GALAXY ELECTRICAL LL5711 VOLTAGE RANGE: 7 0 V POWER DISSIPATION: 400 mW SMALL SIGNAL SCHOTTKY DIODES For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fas t s witching m ake it ideal for protection of MOS devices ,s teering,bias ing and coupling diodes for fas t s witching and low logic level applications MINI-MELF Cathode indification φ 1.5± 0.1 3.4 +0.3 -0.1 0.4± 0.1 Dimensions in millimeters MECHANICAL DATA C as e:JEDEC M INI-MELF ,glas s cas e P olarity: Color band denotes cathode end Weight: Approx. 0 .031 grams ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak reverse voltage Pow er dissipation (Inf inite Heat Sink) Maximum single cycle surge 10 Junction tenperature Storage temperature range s square w ave Value 7 0.0 400 1) UNITS V zm W A V RRM P tot IFSM TJ TSTG 2.0 1 25 c-55 ---+ 150 1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Symbols Reverse breakdow n voltage Leakage current Forw ard voltage drop @ V R=50V @ IF=1mA IF=15mA Junction capacitance @ V R=0V ,f=1MHz Reverse recovery time @ IF=IR=5mA ,recover to 0.1 IR Termal resistance junction to ambient air @ IR=10 A Min. 70.0 Typ. Max. UNITS V VR IR VF CJ t rr RθJA 200.0 0.41 1.0 2 1 0.3 anA V pF ns /m W www.galaxycn.com Document Number 0265030 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES LL5711 FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD. XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXXXXX-SCHOTTKY BARRIER FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF XXXXX COMBINATION SCHOTTKY BARRIER AND PN XXXXX JUNCTION GUARD RING mA 10 5 2 mA 100 80 IF 1 IF 60 5 2 0.1 40 5 20 2 0.01 0 0.5 1 0 0 0 .5 1 V V VF VF FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT XXXXXXXXXVARIATION TEMPERATURES FIG.4 -- TYPICAL CAPACITANCE CURVE AS A XXXXX- JUNCTION OF REVERSE VOLTAGE µA 100 5 2 10 pF 150 125 ℃ 2 TJ=25 100 ℃ 75 ℃ 50 1 IR CJ 5 2 1 5 2 0 .1 5 2 0 .0 1 0 10 20 30 40 50 25 ℃ V 0 0 10 20 30 40 50 V VR VR www.galaxycn.com Document Number 0265030 BLGALAXY ELECTRICAL 2.
LL5711 价格&库存

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