MMBT3904

MMBT3904

  • 厂商:

    BILIN(银河)

  • 封装:

    SOT-23

  • 描述:

    NPN型硅外延平面晶体管

  • 数据手册
  • 价格&库存
MMBT3904 数据手册
BL Galaxy Electrical NPN SWITCHING TRANSISTOR FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT3906). Collector Current Capability Ic=200mA. Collector-emitter Voltage VCEO=40V. Production specification MMBT3904 Pb Lead-free APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. MMBT3904 Marking 1AM Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Transistor mounted on an FR4 printed-circuit board. Tamb≤25°C CONDITIONS open emitter open base open collector MIN. 60 40 6 -65 -65 MAX. 200 200 100 250 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C Document number: BL/SSSTC061 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN SWITCHING TRANSISTOR ELECTRICAL CHARACTERISTICS @ Ta=25℃ SYMBOL ICBO IEBO PARAMETER collector cut-off current emitter cut-off current CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; IC= 0.1mA IC = 1mA IC = 10mA IC = 50mA IC = 100mA IC = 10mA; IB = 1mA B Production specification MMBT3904 unless otherwise specified MIN. 60 80 100 60 30 650 300 MAX. 50 50 300 200 300 850 950 4 8 5 mV mV mV mV pF pF MHz dB UNIT nA nA hFE DC current gain VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 50mA; IB = 5mA B IC = 10mA; IB = 1mA B IC = 50mA; IB = 5mA B IE = Ie= 0; VCB= 5V; f = 1MHz IC = Ic = 0; VBE=500mV; f =1MHz IC =10mA; VCE =20V; f =100MHz IC=100mA; VCE =5V; RS =1kΩ;f =10Hz to15.7kHz Switching times (between 10% and 90% levels); td tr ts tf Note delay time rise time storage time fall time Pulse test: tp≤300 ms; d≤0.02. ICon=10mA; IBon =1mA; IBoff = -1mA 35 35 200 50 ns ns ns ns Document number: BL/SSSTC061 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN SWITCHING TRANSISTOR Production specification MMBT3904 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC061 Rev.A www.galaxycn.com 3 BL Galaxy Electrical NPN SWITCHING TRANSISTOR PACKAGE OUTLINE Plastic surface mounted package A E Production specification MMBT3904 SOT-23 SOT-23 Dim A B C D E G H H C Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device MMBT3904 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC061 Rev.A www.galaxycn.com 4
MMBT3904 价格&库存

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MMBT3904
  •  国内价格
  • 50+0.07787
  • 500+0.06048
  • 3000+0.05076

库存:1638