BL Galaxy Electrical
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction. Complementary NPN type available (MMBT3904). Low Current (Max:-100mA). Low Voltage(Max:-40v).
Production specification
MMBT3906
Pb
Lead-free
APPLICATIONS
Ideal for medium power amplification and switching SOT-23
ORDERING INFORMATION
Type No. MMBT3906 Marking 2A Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Transistor mounted on an FR4 printed-circuit board. Tamb≤25°C CONDITIONS open emitter open base open collector MIN. -65 -65 MAX. -40 -40 -6 -100 -200 -100 250 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C
Document number: BL/SSSTC062 Rev.A
www.galaxycn.com 1
BL Galaxy Electrical
PNP General Purpose Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃
SYMBOL ICBO IEBO PARAMETER collector cut-off current emitter cut-off current CONDITIONS IE = 0; VCB = -30 V IC = 0; VEB = 6 V VCE = -1V; IC= -0.1mA IC = -1mA IC = -10mA IC = -50mA IC = -100mA IC = -10mA; IB = 1mA
B
Production specification
MMBT3906
unless otherwise specified MIN. 60 80 100 60 30 250 MAX. -50 -50 300 -200 -300 -850 -950 4.5 10 4 mV mV mV mV pF pF MHz dB UNIT nA nA
hFE
DC current gain
VCEsat VBEsat Cc Ce fT NF
collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure
IC = -50mA; IB = -5mA
B
IC = -10mA; IB = -1mA
B
IC = -50mA; IB = -5mA
B
IE = Ie= 0; VCB = -5 V; f = 1 MHz IC = Ic= 0; VEB = -500 mV; f = 1 MHz IC = -10mA; VCE = -20 V; f = 100MHz IC = -100μA; VCE = -5V; RS = 1 kΩ;f = 10Hz to15.7 kHz
Switching times (between 10% and 90% levels); ton td tr toff ts tr Note Turn-on time delay time rise time turn-off time storage time fall time Pulse test: tp≤300 ms; d≤0.02. ICon= -10mA; IBon = -1mA; IBoff= -1mA 65 35 35 300 225 75 ns ns ns ns ns ns
Document number: BL/SSSTC062 Rev.A
www.galaxycn.com 2
BL Galaxy Electrical
PNP General Purpose Transistor
Production specification
MMBT3906
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC062 Rev.A
www.galaxycn.com 3
BL Galaxy Electrical
PNP General Purpose Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A E
Production specification
MMBT3906
SOT-23
SOT-23
Dim A B C D E G H
H C
Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35
Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45
K
B
1.0Typical
D G
J
J K
0.1Typical
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
Device MMBT3906
INFORMATION
Package SOT-23 Shipping 3000/Tape&Reel
Document number: BL/SSSTC062 Rev.A
www.galaxycn.com 4
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