MMBTA42

MMBTA42

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    MMBTA42 - NPN High Voltage Amplifier - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBTA42 数据手册
BL Galaxy Electrical NPN High Voltage Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBTA92). Ideal for medium power amplification and switching. Production specification MMBTA42 Pb Lead-free APPLICATIONS NPN High voltage amplifier. SOT-23 ORDERING INFORMATION Type No. MMBTA42 Marking 1D Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj ,Tstg Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob fT Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector dissipation junction and storage temperature Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage Collector output capacitance transition frequency Test conditions Value 300 300 6 0.2 0.35 -55-150 MIN. 300 300 6 25 40 40 MAX. 0.1 0.1 0.5 0.9 3.0 50 V V pF MHz UNIT V V V A W °C UNIT V V V μA μA ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified IC=100μA,IE=0 IC=1.0mA,IB=0 B IE=100μA,IC=0 IE = 0; VCB = 200V IC = 0; VEB = 6V VCE =10V; IC=1mA VCE =10V;IC =10mA VCE =10V;IC =30mA IC =20mA; IB =2mA B IC =20mA; IB=2mA B VCB=20V,IE=0;f=1.0MHz IC=10mA; VCE =20V f=100MHz Document number: BL/SSSTC076 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN High Voltage Amplifier Production specification MMBTA42 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC076 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN High Voltage Amplifier PACKAGE OUTLINE Plastic surface mounted package A E Production specification MMBTA42 SOT-23 SOT-23 Dim A B C D E G H H C Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device MMBTA42 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC076 Rev.A www.galaxycn.com 3
MMBTA42
1. 物料型号: - 型号:MMBTA42 - 封装:SOT-23

2. 器件简介: - MMBTA42是一款NPN高电压放大器,采用外延平面芯片结构,无铅,并且有对应的PNP型号MMBTA92。适用于中等功率放大和开关应用。

3. 引脚分配: - COLLECTOR(集电极) - BASE(基极) - EMITTER(发射极)

4. 参数特性: - 最大额定值(@Ta=25°C): - VCBO:集电极-基极电压,300V - VCEO:集电极-发射极电压,300V - VEBO:发射极-基极电压,6V - Ic(DC):集电极电流(直流),0.2A - Pc:集电极耗散功率,0.35W - Tj,Tstg:结和存储温度,-55至150°C - 电气特性(@Ta=25°C): - V(BR)CBO:集电极-基极击穿电压,300V - V(BR)CEO:集电极-发射极击穿电压,300V - V(BR)EBO:发射极-基极击穿电压,6V - IcBO:集电极截止电流,0.1A - IEBO:发射极截止电流,0.1μA - hFE:直流电流增益,25至40 - VCE(sat):集电极-发射极饱和电压,0.5V - VBE(sat):基极-发射极饱和电压,0.9V - Cob:集电极输出电容,3.0pF - fr:转换频率,50MHz

5. 功能详解: - MMBTA42是一款NPN高电压放大器,具有外延平面芯片结构,适用于中等功率放大和开关应用。

6. 应用信息: - 适用于NPN高电压放大器。

7. 封装信息: - 封装类型:SOT-23 - 尺寸参数(单位:mm): - A:2.85至2.95 - B:1.25至1.35 - C:1.0(典型值) - D:0.37至0.43 - E:0.35至0.48 - G:1.85至1.95 - H:0.02至0.1 - J:0.1(典型值) - K:2.35至2.45
MMBTA42 价格&库存

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