MMBTA55

MMBTA55

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    MMBTA55 - PNP General Purpose Transistor - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBTA55 数据手册
BL Galaxy Electrical PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN types available (MMBTA05/MMBTA06) Production specification MMBTA55/A56 Pb Lead-free APPLICATIONS Ideal for medium NPN amplification and switching. SOT-23 ORDERING INFORMATION Type No. MMBTA55 MMBTA56 Marking 2H 2GM Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC RθJA Tj ,Tstg Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector dissipation Thermal Resistance, Junction to Ambient junction and storage temperature MMBTA55 -60 -60 -4 -0.5 0.35 357 -55-150 MMBTA56 -80 -80 UNIT V V V A W °C/W °C Document number: BL/SSSTC123 Rev.A www.galaxycn.com 1 BL Galaxy Electrical PNP General Purpose Transistor Symbol V(BR)CBO Parameter Collector-base breakdown voltage MMBTA55 MMBTA56 Collector-emitter breakdown voltage MMBTA55 MMBTA56 Emitter-base breakdown voltage collector cut-off current collector cut-off current MMBTA55 MMBTA56 MMBTA55 MMBTA56 Test conditions Production specification MMBTA55/A56 MIN. -60 -80 -80 -80 -4 100 100 50 -0.1 -0.1 -0.25 -1.2 V V MHz MAX. UNIT V ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified IC=-100μA,IE=0 V(BR)CEO IC=-10mA,IB=0 B V V(BR)EBO ICBO ICEO hFE VCE(sat) VBE(sat) fT IE=-100μA,IC=0 IE = 0; VCB = -60V IE = 0; VCB = -80V IB = 0; VCB = -60V IB= 0; VCB = -80V B V μA μA DC current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency VCE = -1V;IC = -10mA VCE = -1V;IC = -100mA IC = -100mA; IB = -10mA B IC = -100mA; VCE = -1.0V IC = -100mA; VCE = -1V; f = 100MHz PACKAGE OUTLINE Plastic surface mounted package A E SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm Document number: BL/SSSTC123 Rev.A www.galaxycn.com 2 BL Galaxy Electrical PNP General Purpose Transistor SOLDERING FOOTPRINT Production specification MMBTA55/A56 Unit : mm PACKAGE Device INFORMATION Package SOT-23 Shipping 3000/Tape&Reel MMBTA55/MMBTA56 Document number: BL/SSSTC123 Rev.A www.galaxycn.com 3
MMBTA55
1. 物料型号: - 型号:MMBTA55/A56

2. 器件简介: - 该器件为PNP型通用晶体管,采用外延平面芯片结构,并且有对应的NPN型晶体管(MMBTA05/MMBTA06)可供选择。

3. 引脚分配: - MMBTA55和MMBTA56都采用SOT-23封装,引脚分布如下: - 1脚:发射极(Emitter) - 2脚:基极(Base) - 3脚:集电极(Collector)

4. 参数特性: - 包括最大集电极-基极电压(Vcbo)、最大集电极-发射极电压(Vceo)、最大发射极-基极电压(Vebo)、直流集电极电流(Ic)、集电极耗散功率(Pc)、结到环境的热阻(ReJA)以及结温和存储温度范围(Tj,Tstg)。

5. 功能详解: - 该晶体管适用于中等放大和开关的NPN放大应用。

6. 应用信息: - 适用于中等NPN放大和开关应用。

7. 封装信息: - 采用塑料表面贴装封装SOT-23,提供了详细的尺寸参数。
MMBTA55 价格&库存

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