MMBTH10

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES High transition frequency. Power dissipation.(PC=350mW) Production specification MMBTH10 Pb Lead-free APPLICATIONS VHF/UHF Transistor. ORDERING INFORMATION Type No. MMBTH10 Marking 3EM SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 30 25 3 50 350 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter on voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) fT Test conditions IC=100μA,IE=0 IC=0.1mA,IB=0 B MIN 30 25 3 MAX UNIT V V V IE=10μA,IC=0 VCB=25V,IE=0 VEB=2V,IC=0 VCE=10V,IC=4.0mA IC=4.0mA, IB= 0.4mA B 0.1 0.1 60 0.5 0.95 650 μA μA V V MHz IC=4.0mA, VCE=10V VCE=10V, IC= 4.0mA f=100MHz Document number: BL/SSSTC125 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification MMBTH10 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC125 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification MMBTH10 SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device MMBTH10 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC125 Rev.A www.galaxycn.com 3