MMDT2222A

BL Galaxy Electrical Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available MMDT2907A. Ultra-small surface mount package. Production specification MMDT2222A Pb Lead-free APPLICATIONS Dual NPN small signal surface mount transistor SOT-363 ORDERING INFORMATION Type No. MMDT2222A Marking K1P Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PD RθJA Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Power Dissipation Thermal Resistance, Junction to Ambient Junction and Storage Temperature Value 75 40 6 600 200 625 -55to+150 Unit V V V mA mW ℃/W ℃ Document number: BL/SSSTE001 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Dual NPN Small Signal Surface Mount Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Base Cut-off Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO IBL Production specification MMDT2222A unless otherwise specified MIN MAX 75 40 6 35 50 75 40 50 35 0.6 300 10 10 10 20 0.3 1.0 1.2 2.0 V V MHz UNIT V V V nA μA nA nA nA Test conditions IC=10μA IE=0 IC=10mA IB=0 B IE=10μA IC=0 VCB=60V IE=0 VCB=60V IE=0 TA=150℃ VCE=60V IEB(off)=3.0V VEB=3V IC=0 VCE=60V IEB(off)=3.0V VCE=10V IC=100μA VCE=10V IC=1.0mA VCE=10V IC=10mA DC current gain hFE VCE=10V IC=150mA VCE=10V IC=500mA VCE=10V IC=10mA TA=-55℃ VCE=1.0V IC=150mA IC=150mA IB=15mA IC=500mA IB=50mA B B 100 300 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Noise Figure SWITCHING CHARACTERISTICS Delay time Rise time Storage time Fall time VCE(sat) VBE(sat) fT IC=150mA IB=15mA IC=500mA IB=50mA B B VCE=20V IC=20mA f=100MHz Cobo Cibo NF VCB=10V,f=1.0MHz,IE=0 VEB=0.5V,f=1.0MHz,IC=0 VCE=10V,f=1.0kHz,IC=100μA RS=1.0kΩ Vcc=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA - 8 25 4.0 pF pF dB td tr ts tf 10 25 225 60 ns ns ns ns Document number: BL/SSSTE001 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Dual NPN Small Signal Surface Mount Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification MMDT2222A SOT-363 SOT-363 Dim A B C D E G H J K Min 1.8 1.15 0.10 0.25 0.02 2.1 Max 2.2 1.35 0.30 0.40 0.10 2.3 1.0Typical 0.65Typical 0.1Typical All Dimensions in mm PACKAGE Device MMDT2222A INFORMATION Package SOT-363 Shipping 3000/Tape&Reel Document number: BL/SSSTE001 Rev.A www.galaxycn.com 3