BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Epitaxial planar die construction. Complements the MMST2907A. Ultra-small surface mount package.
Production specification
MMST2222A
Pb
Lead-free
APPLICATIONS
NPN Silicon Epitaxial Planar Transistor. SOT-323
ORDERING INFORMATION
Type No. MMST2222A Marking K3P
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 75 40 6 600 200 -55~150 Units V V V mA mW ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF006 Rev.A
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BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
Parameter Symbol Test conditions
Production specification
MMST2222A
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
75
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
B
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
10
nA
Emitter cut-off current
IEBO
VEB=3V,IC=0 VCE=10V,IC=0.1mA VCE=10V,IC=1mA 35 50 75 100 40 300 -
10
nA
DC current gain
hFE
VCE=10V,IC=10mA VCE=10V,IC=150mA VCE=10V,IC=500mA
Collector-emitter saturation voltage
VCE(sat)
ICE=500mA,IB=50mA ICE=150mA,IB=15mA
B B
0.3 1.0 0.6 300 8 1.2 2.0
V
Base-emitter saturation voltage Transition frequency Collector output capacitance
VBE(sat) fT Cob
ICE=500mA,IB=50mA ICE=150mA,IB=15mA
B B
V MHz pF
VCE=20V, IC= 20mA,f=100MHz VCB=10V,IE=0,f=1MHz
Document number: BL/SSSTF006 Rev.A
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BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
Production specification
MMST2222A
SOT-323
SOT-323
Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3
1.0Typical
0.1Typical
All Dimensions in mm
PACKAGE
Device MMST2222A
INFORMATION
Package SOT-323 Shipping 3000/Tape&Reel
Document number: BL/SSSTF006 Rev.A
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