MMST5551

BL Galaxy Electrical NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMST5401). Also available in lead free version. Production specification MMST5551 Pb Lead-free APPLICATIONS Ideal for medium power amplification and switching. SOT-323 ORDERING INFORMATION Type No. MMST5551 Marking K4N Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj ,Tstg Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector dissipation junction and storage temperature Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency Test conditions Value 180 160 6 0.6 0.3 -55-150 MIN. 180 160 6 80 80 30 80 0.1 0.1 250 0.5 1 V V MHz μA μA MAX. UNIT V V V A W °C UNIT ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified IC=100μA,IE=0 IC=0.1mA,IB=0 IE=100μA,IC=0 IE = 0; VCB = 180V IC = 0; VEB = 4V VCE = 5V; IC= 1mA VCE = 5V;IC = 10mA VCE = 5V;IC = 50 mA IC = 50 mA; IB = 5 mA IC = 50 mA; IB = 5 mA IC = 10mA; VCE = 10V; f = 100MHz Document number: BL/SSSTC056 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN General Purpose Transistor Production specification MMST5551 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC056 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN General Purpose Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification MMST5551 SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE INFORMATION Device MMST5551 Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTC056 Rev.A www.galaxycn.com 3