MUR190

MUR190

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    MUR190 - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
MUR190 数据手册
BLGALAXY ELECTRICAL HIGH EFFICIENCY RECT IFIER F EATURES L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh crrent capability E as ily cleaned with Freon,Alcohol, ls opropand and s im ilar s olvents MUR170 --- MUR1100 VOLTAGE RANGE: 700---1000 V CURRENT: 1.0 A D O - 41 MECHANICAL DATA C as e: JEDEC DO-41, m olded plas tic Term inals : Axial leads ,s olderable per MIL-STD -202,Method 208 P olarity: Color band denotes cathode W eight: 0.012 ounces , 0.34gram s Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%. MUR170 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectif ied current 9.5mm lead length, @TA =75 MUR180 800 560 800 1.0 MUR190 900 630 900 MUR1100 1000 700 1000 UNITS V V V A V RRM V RMS V DC IF(AV) 700 490 700 Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 1.0A Maximum reverse current @TA =25 IFSM VF IR trr CJ Rθ JA TJ TSTG 30.0 A 1.7 10.0 100.0 75 15 60 - 5 5 ----- + 150 - 55 ----- + 150 V A ns pF /W at rated DC blocking voltage @TA =100 Maximum reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range NOTE: 1.Measured with I F =0.5A, I R=1A, I rr=0.25A. (Note1) (Note2) (Note3) 2. Measured at 1.0MH Z a nd applied rev erse v oltage of 4.0V DC. 3 . Thermal resistance from junction to ambient. www.galaxycn.com Document Number 0262021 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES MUR170 --- MUR1100 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 50 N 1. 10 N 1. +0.5A 0 PULSE GENERATOR (NOTE2) D.U.T. (+) 25VDC (approx) (-) 1 NONINDUCTIVE -0.25A OSCILLOSCOPE (NOTE1) -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIMEBASEFOR 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT FIG.3 -- FORWARD DERATING CURVE 10 1.0 1.0 0.8 T J =25 Pulse Width=300 µ S 0.1 AMPERES 0.6 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.4 0.01 0.2 0 0 0.001 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 .8 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- PEAK FORWARD SURGE CURRENT Z PEAK FORWARD SURGE CURRENT AMPERES FIG.5--TYPICAL JUNCTION CAPACITANCE 50 40 30 JUNCTION CAPACITANCE,pF 200 100 60 40 20 10 6 4      TJ=25 TJ=125 8.3ms Single Half Sine-Wave 20 10 0 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS BLGALAXY ELECTRICAL Document Number 0262021 www.galaxycn.com 2.
MUR190
物料型号:MUR170, MUR180, MUR190, MUR1100

器件简介:BL GALAXY ELECTRICAL的高效整流器,具有低成本、扩散结、低漏电、低正向电压降、高电流能力等特点。可以轻松使用氟利昂、酒精、异丙醇和类似溶剂清洁。

引脚分配:轴向引脚,可按照MIL-STD-202方法208焊接。极性通过色环表示阴极。

参数特性: - 最大重复峰值反向电压(VRRM):700V至1000V - 最大RMS电压(VRMS):490V至700V - 最大直流阻断电压(VDc):700V至1000V - 最大平均整流电流(IF(AV)):1.0A - 峰值正向浪涌电流(IFSM):30.0A,叠加在额定负载上,T=125℃ - 最大瞬时正向电压@1.0A(VF):1.7V - 最大反向电流在额定直流阻断电压下(IR):100.0至10.0uA - 最大反向恢复时间(trr):75ns - 典型结电容(CJ):15pF - 典型热阻(RRJA):60℃

功能详解:这些整流器适用于单相半波50Hz的电阻性或感性负载。对于电容性负载,需要降低20%的使用。它们能够在极端温度下工作,并且具有较低的热阻,有助于散热。

应用信息:适用于需要高效率整流的场合,如电源、电机驱动等。

封装信息:JEDEC DO-41标准,塑封外壳。
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