R1200F

R1200F

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    R1200F - HIGH VOLTAGE RECTIFIERS - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
R1200F 数据手册
BL GALAXY ELECTRICAL HIGH VOLTAGE RECT IFIERS FEATURES L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh current capability Easily cleaned with alcohol,Isopropanol and sim ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 R1200F --- R2000F VOLTAGE RANGE: 1200 --- 2000 V CURRENT: 0.2A to 0.5A DO - 41 MECHANICAL DATA C ase:JEDEC DO--41,m olded plastic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces ,0.34 gram s Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a m bient tem perature unles s otherwise specified. Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. R1200F Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 R1500F 1500 1050 1500 0.5 R1800F 1800 1260 1800 R2000F 2000 1400 2000 0.2 UNITS V V V A V RRM V RMS V DC IF(AV) 1200 840 1200 Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 0.5A Maximum reverse current at rated DC blocking voltage Maximum reverse capacitance Typical thermal resistance Typical junction capacitance @TA =25 @TA =100 (Note1) (Note2) (Note3) IFSM VF IR t rr RθJA CJ TJ TSTG 2.5 30.0 A 4.0 5.0 100.0 500 35 15 V A ns /W pF Operating junction temperature range Storage temperature range NOTE: 1. Measrued with I F =0.5A, I R=1A, I rr=0.25A. 2. Thermal resistance f rom junction to ambient. - 55 ---- + 150 - 55 ---- + 150 www.galaxycn.com 3. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. Document Number 0263006 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES R1200F --- R2000F FIG.1 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES FIG.2 -- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT AMPERES 0.5 R1200F - R1800F 10 T J =25 Pulse W idth=300 µ s R1200FR1800F 0.4 0.3 Single Phase Half Wave 60HZ Resistive or Inductive Load 1.0 0.2 R2000F R200F 0.1 0.1 0 25 50 75 100 125 150 175 200 0.01 0.6 1.6 2.6 3.6 4.6 AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.3 -- PEAK FORWARD SURGE CURREENT PEAK FORWARD SURGE CURRENT AMPERES FIG.4 -- TYPICAL JUNCTION CAPACITANCE 100 20 TJ=125 8.3ms Single Half Sine - Wave CAPACITANCE,P F 30 10 10 TJ=25 0 1 10 100 0 1 4 10 100 NUMBER OF CYCLES AT 60HZ REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0263006 BLGALAXY ELECTRICAL 2.
R1200F
1. 物料型号: - R1200F---R2000F

2. 器件简介: - 这些器件是高压整流器,电压范围从1200V到2000V,电流从0.2A到0.5A。特点包括低成本、扩散结、低漏电、低正向电压降和高电流能力。它们可以很容易地用酒精、异丙醇和类似的溶剂清洁。塑料材料符合UL认证94V-0。

3. 引脚分配: - 根据JEDEC DO-41标准,采用轴向引脚,可按MIL-STD-202, Method 208极性着色,颜色带表示阴极。

4. 参数特性: - 最大重复峰值反向电压(VRRM):1200V至2000V - 最大RMS电压(VRMS):840V至1400V - 最大直流阻断电压(VDc):1200V至2000V - 最大平均整流电流(IF(AV)):0.2A至0.5A - 峰值正向浪涌电流(IFSM):30.0A - 最大瞬时正向电压(VF):2.5V至4.0V - 最大反向电流(IR):5.0μA至100.0μA - 最大反向电容(trr):500ns - 典型热阻(ReJA):35°C/W - 典型结电容(CJ):15pF

5. 功能详解: - 这些器件适用于单相、半波、60Hz的电阻性或感性负载。对于电容性负载,需要降低20%的额定值。

6. 应用信息: - 适用于需要高压整流的应用,如电源、电机控制等。

7. 封装信息: - 封装类型为DO-41,塑料材料,符合UL 94V-0认证。
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