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RN1Z

RN1Z

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RN1Z - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
RN1Z 数据手册
BLGALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 RN1Z(Z) VOLTAGE RANGE: 200 V CURRENT: 1.5 A DO - 15 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RN1Z Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 UNITS V VRRM VRMS VDC IF(AV) 200 140 200 1.5 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 60.0 A Maximum instantaneous forw ard voltage @ 1.5 A Maximum reverse current @TA=25 VF IR trr CJ RθJA TJ TSTG 0.92 20.0 1000.0 50 50 50 - 55 ---- + 150 - 55 ---- + 150 V A ns pF /W at rated DC blocking voltage @TA=100 Maximum reverse recovery time Typical junction capacitance Typical thermal resistance (Note1) (Note2) (Note3) Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0262011 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 50 N 1. 10 N 1. RN1Z(Z) +0.5A D.U.T. (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) 0 -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD RECTIFIED CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 --FORWARD DERATING CURVE 100 10 1.5 AMPERES TJ=25 Pulse Width=300 µS 1.0 1.0 AMPERES 5.0 0.1 0.04 0.01 Single Phase Half W ave 60Hz Resistive or Inductive Load 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 --TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT FIG.5--PEAK FORWARD SURGE CURRENT 80 70 60 50 T J =125 8.3ms Single Half Sine-Wave JUNCTION CAPACITANCE,pF 200 AMPERES 120 100 50      TJ =25 40 30 20 10 0 1 2 4 81 0 20 40 60 80 100 20 10 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz Document Number 0262011 BLGALAXY ELECTRICAL www.galaxycn.com 2.

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