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RN3Z

RN3Z

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RN3Z - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
RN3Z 数据手册
BLGALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 RN3Z(Z) VOLTAGE RANGE: 200 V CURRENT: 3.0 A DO - 27 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RN3Z Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 UNITS V VRRM VRMS VDC IF(AV) 200 140 200 3.0 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 80.0 A Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance @TA=25 @TA=100 (Note1) (Note2) (Note3) VF IR trr CJ RθJA TJ TSTG 0.92 50.0 1000.0 50 70 30 - 55 ---- + 150 - 55 ---- + 150 V A ns pF /W Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0262013 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr RN3Z(Z) 50 N 1. 10 N 1. +0.5A D.U.T. 0 (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD RECTIFIED CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 --FORWARD DERATING CURVE 3.0 100 T J =25 Pulse Width=300 µ S AMPERES 2.0 10 AMPERES Single Phase Half W ave 60Hz Resistive or Inductive Load 1 .0 1 0 0 25 50 75 1 00 125 0.1 0 0.2 0.4 0.6 0.8 1 1 .2 1.4 1.6 1.8 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 --TYPICAL JUNCTION CAPACITANCE 200 FIG.5--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT 80 70 60 50 TJ =125 8.3ms Single Half Sine-Wave JUNCTION CAPACITANCE,pF 100 70 AMPERES 40 30 20 10 0 1 2 4 8 10 20 40 60 80 100 TJ=25 f=1MHz 20 10 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz Document Number 0262013 BLGALAXY ELECTRICAL www.galaxycn.com 2.

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