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RP1H

RP1H

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RP1H - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
RP1H 数据手册
BL GALAXY ELECTRICAL HIGH EFFICIENCY RECT IFIER F EATURES D iffvs ed junction L ow leakage L ow forward voltage drop H igh crrent capability E as ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents RP1H(Z) VOLTAGE RANGE: 2000 V CURRENT: 0.1 A DO - 15L MECHANICAL DATA C as e: JEDEC DO-15L, m olded plas tic Term inals : Axial leads ,s olderable per MIL-STD-202, Method 208 P olarity: Color band denotes cathode Weight: 0.017 ounces , 0.48 gram s Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. RP1H Maximum peak repetitive reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectif ied current 9.5mm lead length, Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load @TJ =125 @TA =75 UNITS V V V A VRRM V R MS VDC IF (AV) 2000 1400 2000 0.1 IF SM 5.0 V Maximum instantaneous f orw ard voltage @ 0.1A Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range N OTE: 1.Measured with I F =0.5A, I R=1A, I rr=0.25A. VF IR t rr CJ Rθ JL TJ TSTG 7.0 20.0 200.0 50 20 15 - 55 ----- + 150 - 5 5 ----- + 150 V A ns pF /W @TA =25 @TA =100 (Note1) (Note2) (Note3) www.galaxycn.com 2 . Measured at 1.0MH Z a nd applied rev erse v oltage of 4.0V D C . 3.Therm al resistance junction to am bient . Document Number 0262038 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 50 N 1. 10 N 1. RP1H(Z) +0.5A D.U.T. 0 (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT FIG.3 -- FORWARD DERATING CURVE 0.1 10 1 0.08 TJ =25 Pulse Width=300 µS AMPERES 0.1 0.06 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.04 0.01 0.02 0.001 0 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 5.0 8.3ms Single Half Sine-Wave FIG.5--TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 4.0 3.0 2.0 JUNCTION CAPACITANCE,pF 4      TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 1.0 0 1 5 10 50 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0262038 BLGALAXY ELECTRICAL 2.

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