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RS1J

RS1J

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RS1J - SURFACE MOUNT RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
RS1J 数据手册
BL GALAXY ELECTRICAL SURFACE MOUNT RECTIFIER FEATURES Plastic package has underwriters laborator flammability classification 94V-0 For surface mounted applications Low profile package Built-in strain relief,ideal for automated placement Glass passivated chip junction High temperature soldering: 111 250oC/10 seconds at terminals 111 RS1A - - - RS1M REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 1.0A DO - 214AC(SMA) MECHANICAL DATA Case:JEDEC DO-214AC,molded plastic over 1111passivated chip Terminals:Solder plated, solderable per MIL-STD1111750, Method 2026 Polarity: color band denotes cathode end Weight: 0.002 ounces, 0.064 gram inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified RS1A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ord rectified current c @ TL=90OC Peak forward surge current 8.3ms single c half-sine-wave superimposed on rated c load Maximum instantaneous forw ard voltage at 1.0A Maximum DC reverse current @TA=25oC RS1B 100 70 100 RS1D RS1G RS1J RS1K RS1M 200 140 200 400 280 400 1.0 30.0 1.30 5.0 600 420 600 800 560 800 1000 700 1000 UNITS V V V A VRRM VRWS VDC IF(AV) IFSM VF IR trr CJ R R JA JL 50 35 50 A V A at rated DC blocking voltage @T A=125oC Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resitance (NOTE 3) 50.0 150 10 105 32 - 55 ------ + 150 250 500 7.0 o ns pF C/W o Operating junction and storage temperature range TJTSTG NOTE: 1.Rev erse recov ery time test conditions:IF=0.5A,IR=1.0A,Irr=0.25A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts C www.galaxycn.com 3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm2) copper pad areas Document Number 0280003 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES Fig. 1 — Forward Current Derating Curve 1.2 50 Resistive or Inductive Load RS1A- - -RS1M Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TL = 90°C 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Rectified Current (A) 1.0 40 30 0.5 20 10 P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0 0 20 40 60 80 100 120 140 160 180 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 HZ Fig. 3 — Typical Instantaneous Forward Characteristics 30 30 Fig. 4 — Typical Reverse Characteristics Instantaneous Reverse Current (µA) 10 Instantaneous Forward Current (A) 10 TJ = 125°C 1 TJ = 25°C 0.1 Pulse Width = 300µs 1% Duty Cycle TJ = 125°C 1 TJ = 100°C 0.1 TJ = 25°C 0.01 0 20 40 60 80 100 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 — Typical Junction Capacitance 30 Fig. 6 — Typical Transient Thermal Impedance 100 10 Transient Thermal Impedance (°CW) Junction Capacitance (pF) TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p Mounted on 0.2 x 0.2" (5 x 5mm) Copper Pad Area 10 1 1 10 100 1 0.01 0.1 1 10 Reverse Voltage (V) t, Pulse Duration (sec.) www.galaxycn.com Document Number 0280003 BL GALAXY ELECTRICAL 2.

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