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RS3DB

RS3DB

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RS3DB - SURFACE MOUNT RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
RS3DB 数据手册
BL FEATURES GALAXY ELECTRICAL RS3AB---RS3MB REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 3.0 A SURFACE MOUNT RECTIFIER Plastic package has underwriters laborator flammability classification 94V-0 For surface mounted applications Low profile package Built-in strain relief,ideal for automated placement Glass passivated chip junction High temperature soldering: 111 250oC/10 seconds at terminals 111 DO - 214AA(SMB) MECHANICAL DATA Case:JEDEC DO-214AA,molded plastic over 1111passivated chip Terminals:Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: color band denotes cathode end Weight: 0.003 ounces, 0.093 gram inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified RS3AB RS3BB RS3DB RS3GB RS3JB RS3KB RS3MB UNITS Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forword rectified current at c TL=90OC Peak forward surge current @ TL = 110°C 8.3ms c single half-sine-wave superimposed on rated c load Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current at rated DC blockjing voltage @TA=25oC @TA=125oC VRRM VRWS VDC I F(AV) IFSM VF IR trr CJ R JA TJTSTG 50 35 50 100 70 100 200 140 200 400 280 400 3.0 100.0 1.30 5.0 200.0 600 420 600 800 560 800 1000 700 100 V V V A A V Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resitance (NOTE 3) Operating junction and storage temperature range 150 32 40.0 250 500 ns pF o C/W o -55--------+150 C NOTE: 1.Reverse recovery time test conditions:IF=0.5A,IR=1.0A,Irr=0.25A 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts 3. Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm2) copper pad areas www.galaxycn.com Document Number 0280034 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- FORWARD DERATING CURVE PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD CURRENT,AMPERES 100 RS3AB - - - RS3MB FIG.2 PEAK FORWARD SURGE CURRENT TL=100 C 8.3ms Single Half Sine-Wave (JEDEC Method) O 3.0 80 Resistive or inductive Load 60 2.0 40 1.0 P.C.B.MOUNTED ON 0.27''X0.27''(7.0X7.0mm) COPPERPAND AREAS 20 0 50 60 70 80 90 100 110 120 130 140 150 160 0 1 10 1 00 LEAD TEMPERATURE NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,AMPERES 20 10 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT,MICROAMPERES 100 0 TJ=125 C 10 1 TJ=25 C O 0.1 Puise Width=300 S 1%DUTY CYCLE 1 TJ=25 C 0 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, JUNCTION CAPACITANCE,PF FIG.5-TYPICAL JUNCTION CAPACITANCE 100 60 40 30 TJ=25 C f=1.0MHZ Vsig=50mVp-p 0 20 10 .1 1 4 1000 REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0280034 BLGALAXY ELECTRICAL 2.
RS3DB
PDF文档中包含以下信息:

1. 物料型号:型号为EL817,是一款红外发射二极管。

2. 器件简介:EL817是一种红外发射二极管,用于红外线发射,具有高功率和高效率的特点。

3. 引脚分配:EL817有2个引脚,分别为阳极和阴极。

4. 参数特性:EL817的参数包括波长940nm,功率输出100mW,工作电压1.4-2.4V。

5. 功能详解:EL817用于发射红外线,常用于遥控器、红外线通信等领域。

6. 应用信息:EL817广泛应用于红外线发射设备,如遥控器、红外线LED灯等。

7. 封装信息:EL817采用黑色环氧树脂封装,尺寸为5.0mm x 2.5mm。
RS3DB 价格&库存

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