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RU1PZ

RU1PZ

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    RU1PZ - HIGH EFFICIENCY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
RU1PZ 数据手册
BL GALAXY ELECTRICAL HIGH EFFICIENCY RECT IFIER F EATURES L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh current capability E as ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents RU1P(Z) VOLTAGE RANGE: 1000 V CURRENT: 0.4 A DO - 15L MECHANICAL DATA C as e: JEDEC DO-15L, m olded plas tic Term inals : Axial leads ,s olderable per MIL-STD-202, Method 208 P olarity: Color band denotes cathode W eight: 0.017 ounces , 0.48 gram s Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%. RU1P Maximum peak repetitive reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load @TJ =125 @TA =75 UNITS V V V A VRRM V R MS VDC IF(AV) 1000 700 1000 0.4 IFSM 10.0 V Maximum instantaneous f orw ard voltage @ 0.4A Maximum reverse current a t rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range N OTE: 1.Measured with I F =0.5A, I R=1A, I rr=0.25A. VF IR t rr CJ Rθ JL TJ TSTG 4.0 5.0 x 50.0 50 20 15 - 55 ----- + 150 - 5 5 ----- + 150 V A @TA =25 @TA =100 (Note1) (Note2) (Note3) ns pF /W www.galaxycn.com 2 . Measured at 1.0MH Z a nd applied rev erse v oltage of 4.0V D C . 3.Therm al resistance junction to am bient. Document Number 0262039 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. RU1P(Z) trr +0.5A D.U.T. (+) 25VDC (approx) (-) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) 0 -0 .2 5A -1 .0 A 1cm NOTES:1.RISE TIME = 7ns M AX.INPUT IM PEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns M AX.SOURCE IM PEDANCE=50 . SE TIM BASEFOR 10/20 ns/cm TE FIG.2 -- TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.3 -- FORWARD DERATING CURVE 0.5 0 .4 0.1 0 .3 Single Phase Half Wave 60Hz Resistive or Inductive Load TJ=25 Pulse Width=300us 0.01 0 .2 0 .1 0 0 25 50 75 100 125 150 0.001 0 1 2 3 4 5 6 7 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 10 FIG.5--TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 8 8.3m s S ingle H alf Sine-W ave 6 4 JUNCTION CAPACITANCE,pF 4      TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 2 0 1 5 10 50 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS Document Number 0262039 BLGALAXY ELECTRICAL www.galaxycn.com 2.
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