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SBL850

SBL850

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    SBL850 - SCHOTTKY BARRIER RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
SBL850 数据手册
BL FEATURES GALAXY ELECTRICAL SBL830---SBL8100 VOLTAGE RANGE: 30 --- 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 TO - 220AC MECHANICAL DATA Case:JEDEC TO--220AC,molded plastic Terminals: Leads solderable per MIL- STD-750,Method 2026 Polarity: As marked Weight: 0.064 ounces,1.81 gram Mounting position: Any (mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SBL SBL SBL SBL SBL SBL SBL SBL SBL SBL UNITS 830 835 840 845 850 860 870 880 890 8100 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current TC=95 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load TJ=125 Maximum instantaneous forw ard voltage @ 8.0A Maximum reverse current @TC=25 VRRM VRMS VDC IF(AV) 30 21 30 35 25 35 40 28 40 45 32 45 50 35 50 8.0 60 42 60 70 49 70 80 56 80 90 63 90 100 70 100 V V V A IFSM VF IR RθJC TJ TSTG 0.55 200 A 0.70 0.5 55 6.9 -55--- + 150 -55--- + 150 0.85 V mA /W at rated DC blocking voltage @TC=100 Typical thermal resistance (Note1) Operating junction temperature range Storage temperature range Note: 1. Thermal resistance junction to case. www.galaxycn.com Document Number 0267061 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- PEAK FORWARD SURGE CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, SBL830---SBL8100 FIG.2 -- FORWARD DERATING CURVE 200 10 160 8.0 AMPERES 8.3ms Single Half Sine Wave TJ=125 6.0 120 4.0 80 2.0 40 0 25 50 75 100 125 150 0 1 10 100 NUMBER OF CYCLES AT 60HZ CASE TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT, INSTANTANEOUS REVERSE CURRENT, MILL AMPERES 10 Tc=100 1 200 100 SBL830-SBL845 SBL870-SBL8100 AMPERES 10 SBL850-SBL860 T C =25 .1 T J= 2 5 P u ls e w id t h = 3 0 0 1 % D u t y C y c le s 1 .2 .4 .6 .8 1.0 1 .2 1 .4 1 .6 1 .8 2.0 2.2 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.galaxycn.com Document Number 0267061 BLGALAXY ELECTRICAL 2.
SBL850
1. 物料型号: - 型号包括SBL830至SBL8100,覆盖了30V至100V的电压范围,电流均为8.0A。

2. 器件简介: - 该器件为肖特基势垒整流器,具有金属-半导体结构和保护环,采用外延结构,低正向电压降和低开关损耗,高浪涌能力,适用于低功耗、高频率逆变器、飞轮整流和极性保护应用。

3. 引脚分配: - 根据JEDEC TO-220AC标准,封装为模塑塑料,引脚可按照MIL-STD-750, Method 2026进行焊接。

4. 参数特性: - 最大重复峰值反向电压(VRRM)从30V至100V不等,最大RMS电压(VRMS)从21V至70V不等,最大直流阻断电压(VDc)与VRRM相同,最大平均正向整流电流(IF(AV))为8.0A,峰值正向浪涌电流(IFSM)从200A起不等,最大瞬时正向电压(VF)从0.55V至0.85V不等,最大反向电流(IR)从0.5mA至55mA不等。

5. 功能详解应用信息: - 器件用于低功耗、高频率的逆变器、飞轮整流和极性保护等应用,具有低正向电压降和高浪涌能力的特点。

6. 封装信息: - 封装为TO-220AC,塑料材料符合V-0级94V0的阻燃标准,极性标记按照标记指示,重量为0.064盎司(约1.81克),可安装在任意位置。
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