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SMF16A

SMF16A

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    SMF16A - SURFACE MOUNT ESD PROTECTION DIODES - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
SMF16A 数据手册
BL FEATURES GALAXY ELECTRICAL 1N6267- - -1N6303A BREAKDOWN VOLTAGE: 6.8 --- 200 V PEAK PULSE POWER: 1500 W TRANSIENT VOLTAGE SUPPRESSOR Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 1 500W peak pulse power capability with a 10/1000 μs waveform, repetition rate (duty cycle): 0.05% Excellent clamping capability L ow incremental surge resistance Fast response time: typically less than 1.0ps from 0 Volts to V(BR) for uni-directional and 5.0ns for bi-directional types For devices with V(BR) 10V,ID are typically less than 1.0 μA / 10 seconds, H igh tem perature soldering guaranteed:265 DO-201AE 0.375"(9.5mm) lead length, 51bs. (2.3kg) tension MECHANICAL DATA C ase:JEDEC DO-201AE, molded plastic Polarity: Color band denotes positive end ( cathode ) except for bidirectional Weight: 0.0 32 ounces, 0 .9 grams Mounting position: Any DEVICES FOR BIDIRECTIONAL APPLICATIONS For bi-directional use C or CA suffix for types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A). Electrical characteristics apply in both directions. MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 a mbient temperature unless otherwise specified. SYMBOL Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1, FIG.1) Peak pulse current w ith a 10/1000μs w aveform (NOTE 1) Steady state pow er dissipation at TL=75 fffff lead lengths 0.375"(9.5mm) (NOTE 2) Peak forw ard surge current, 8.3ms single half ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE 3) Maximum instantaneous forw ard voltage at 100 A f or unidirectional only (NOTE 4) Typical thermal resistance junction-to-lead Typical thermal resistance junction-to-ambient Operating junction and storage temperature range VALUE Minimum 1500 SEE TABLE 1 6.5 200.0 3.5/5.0 20 75 -50---+175 UNIT W A W A V /W /W PPPM IPPM PM(AV) IFSM VF R θJL R θJA TJ, TSTG NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above TA=25 per Fig. 2 (2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm2) per Fig. 5 ( 3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum ( 4) V F=3.5 Volt max. for devices of V (BR) 200V, and V F=5.0 Volt max. for devices of V (BR) >200V www.galaxycn.com Document Number 0285011 BLGALAXY ELECTRICAL 1. ELECTRICAL CHARACTERISTICS at(TA=25 Breakdow n Voltage V (BR) (V) (NOTE1) Min 1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A 1N6272 1N6272A 1N6273 1N6273A 1N6274 1N6274A 1N6275 1N6275A 1N6276 1N6276A 1N6277 1N6277A 1N6278 1N6278A 1N6279 1N6279A 1N6280 1N6280A 1N6281 1N6281A 1N6282 1N6282A 1N6283 1N6283A 1N6284 1N6284A 1N6285 1N6285A 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.0 9.5 9.9 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 Max 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 Test Current at IT (mA) 10.0 10.0 10.0 10.0 10.0 10.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 unless otherwise noted) Maximum Reverse Leakge at V WM ID (NOTE3)(μ A ) 1000 1000 500 500 200 200 50 50 10 10 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Pea k Puls e IPPM(NOTE2) (A) 139 143 128 133 120 124 109 112 100 103 92.6 96.2 86.7 89.8 78.9 82.4 68.2 70.8 63.8 66.7 56.6 59.5 51.5 54.2 47.0 49.0 43.2 45.2 38.4 40.0 34.5 36.2 31.4 32.8 28.8 30.1 26.6 27.8 Maximum Clamping Voltage at IPPM V C(V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 TABLE 1 Maximum Temperature Coefficient of V (BR)(%/ ) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.089 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 www.galaxycn.com Device Type Stand-off Voltage V WM (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 Document Number 0285011 BLGALAXY ELECTRICAL 2. ELECTRICAL CHARACTERISTICS at(TA=25 Breakdow n Voltage V (BR) (V) (NOTE1) Min 1N6286 1N6286A 1N6287 1N6287A 1N6288 1N6288A 1N6289 1N6289A 1N6290 1N6290A 1N6291 1N6291A 1N6292 1N6292A 1N6293 1N6293A 1N6294 1N6294A 1N6295 1N6295A 1N6296 1N6296A 1N6297 1N6297A 1N6298 1N6298A 1N6299 1N6299A 1N6300 1N6300A 1N6301 1N6301A 1N6302 1N6302A 1N6303 1N6303A 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105 108 114 117 124 136 143 144 152 153 162 162 171 180 190 Max 47.3 45.2 51.7 49.4 56.1 53.6 61.8 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 unless otherwise noted) Maximum Reverse Leakge at V WM ID (NOTE3)( μ A ) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Pea k Puls e IPPM(NOTE2) (A) 24.2 25.3 22.1 23.1 20.4 21.4 18.6 19.5 16.9 17.6 15.3 16.3 13.9 14.6 12.7 13.3 11.5 12.0 10.4 10.9 9.5 9.9 8.7 9.1 8.0 8.4 7.0 7.2 6.5 6.8 6.1 6.4 5.8 6.1 5.2 5.5 TABLE 1(Cont' d) Maximum Clamping Voltage at IPPM V C(V) 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 109 104 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 Maximum Temperature Coefficient of V (BR) (%/ ) 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 0.105 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.106 0.106 0.108 0.108 0.108 0.108 0.108 0.108 0.108 Device Type Test Stand-off Current Voltage at IT V WM (mA) (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102 105 111 121 128 130 136 138 145 146 154 162 171 NOTE: For bidirectional use C or CA suffix for types 1 N6267 thru types 1 N6303A (e.g.1N6267 ,1N6303A ). Electrical characteristics apply in both directions. www.galaxycn.com Document Number 0285011 BLGALAXY ELECTRICAL 3. RATINGS AND CHARACTERISTIC CURVES PEAK PULSE POWER (P ) OR CURRENT PP 1N6267- - -1N6303A FIG.1 -- PEAK PULSE POWER RATING CURVE PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN if FIG.3 TA=25 10 FIG.2 -- PULSE DERATING CURVE DERATING IN PERCENTAGE, % 100 75 50 1.0 25 0.1 0.1μ s 1.0μ s 10μ s 100μ s 1ms 10ms (I PPM) tol, PULSE WIDTH, SEC. 0 0 25 50 75 100 125 150 175 200 FIG.3 -- PULSE WAVEFORM 150 PULES WIDTH (td) is DEFINDE as the POINT WHERE the PEAK CURRENT DECAYS to 50% of IPPM TA, AMBIENT TEMPERATURE. IPPM, PEAK PULSE CURRENT, % tr=10¦ Μ s ec PEAK VALUE IPPM FIG.4 -- TYPICAL JUNCTION CAPACITANCE H HHHHHHHH HUNIDIRECTIONAL 100 HALF VALUE - I PPM 2 6.000 TJ=25 f=1.0MHZ Vsig=50mVp-p MEASURED at ZEROBIAS 50 CJ, JUNCTION CAPACITANCE, Pf 10/1000¦ Μ s ec. WAVEFORM as DEFINDE by R.E.A. 10.000 td 0 0 1.0 2.0 3.0 4.0 t, TIME, ms FIG.5 -- STEADY STATE POWER DERATING CURVE PM(AV), STRADY STATE POWER 1.00 1000 MEASURED at STAND-OFF VOLTAGE, VWM L=0.375"(9.5mm) LEAD LENGTHS DISSIPATION, W 0.75 60 HZ RESISTIVEOR INDUCTIVE LOAD 10 1.0 10 100 200 0.50 0.25 1.6 x 1.6 x .040" (40 x 40 x 1mm.) COPPER HEAT SINKS V(BA), BREAKDOWN VOLTAGE, V 0 0 25 50 75 100 125 150 175 200 TL, LEAD TEMPERATURE, ID, INSTANTANEOUS REVERSE IFSM, PEAK FORWARD SURGE FIG.7 -- TYPICAL REVERSE LEAKAGE JJJJJJJJJJJJJJJJJJCHARACTERISTICS 1 .0 0 0 FIG.6 -- MAXIMUN NON-REPETITIVE FORWARD HHHHHH HSURGE CURRENT UNIDIRECTIONAL ONLY 200 LEAKAGE CURRENT, mA 100 M E A S U R E D A T D E V IC E S S T A N D -O F F V O L T A G E , V W M CURRENT, A 100 TJ=TJ max. 8.3ms SINGLE HALF SINE-MAVE (JEDEC METHOD) 10 1 0 .1 T A= 25 ℃ 0 .0 1 0 .0 0 1 0 100 200 300 400 440 500 10 1 10 100 V(BR), BREAKDOWN VOLTAGE, V NUMBER OF CYCLES AT 60 Hz www.galaxycn.com Document Number 0285011 BLGALAXY ELECTRICAL 4.
SMF16A 价格&库存

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SMF16A
  •  国内价格
  • 1+0.0938
  • 30+0.09045
  • 100+0.0871
  • 500+0.0804
  • 1000+0.07705
  • 2000+0.07504

库存:1299

SMF16A
    •  国内价格
    • 1+0.08911
    • 30+0.08593
    • 100+0.08275
    • 500+0.07638
    • 1000+0.0732
    • 2000+0.07129

    库存:100

    SMF16A
      •  国内价格
      • 1+0.405
      • 100+0.378
      • 300+0.351
      • 500+0.324
      • 2000+0.3105
      • 5000+0.3024

      库存:949

      SMF16A
      •  国内价格
      • 1+0.12082
      • 10+0.11634
      • 100+0.10561
      • 500+0.10024

      库存:1099