SMTPA68

BL GALAXY ELECTRICAL SMTPAxxx BREAKDOWN VOLTAGE: 62 --- 270 V PEAK PULSE POWER: 5000 W SMB 4.5± 0.15 TELECOMMUNICATION PROTECTION FEATURES Bidirectional crowbar protection Voltage range from 62V to 270V Low capacitance from 15pF to 30pF typ.@50V Low leakage current: IR=2μA max Holding current: IH=150mA min 2.0± 0.15 Repetitive peak pulse current: IPP=50A,10 /1000μs. DESCRIPTION The SMTPAxxx series has been designed to protect telecommunication equipment against lightning and transient induced by AC power lines.The package/die size ratio has been optimized by using the SMB package. 2.3± 0.15 5.3± 0.2 1.25± 0.2 0.203MAX SCHEMATIC DIAGRAM Dimensions in millimeters Complies with the following standards: GR-1089 Core first level GR-1089 Core second level GR-1089 Core Intra-building ITU-T-K20/K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC -1000-4-5 FCCPart68,lightning surgetypeA FCCPart68,lightning surgetypeB Peak s urge voltage (V) 2500 1000 5000 1500 6000 1500 6000 8000 4000 2000 4000 2000 4000 4000 1500 800 1000 Voltage w aveform ( s) 2/10 10/1000 2/10 2/10 10/700 1/60 ns 0 1.2/50 10/700 1.2/50 10/160 10/560 9/720 Current w aveform ( s) 2/10 10/1000 2/10 2/10 5/310 Required Necessary peak current resistor (A) () 500 100 500 100 150 37.5 12 10 24 0 53 0 0 0 21.5 0 0 0 21.5 0 12.5 6.5 0 www.galaxycn.com ESD contact discharge ESD air discharge 5/310 1/20 5/310 8/20 10/160 10/560 5/320 100 50 100 50 100 100 200 100 25 Document Number 0286002 BLGALAXY ELECTRICAL 3.5± 0.2 0.2± 0.05 1. BL Symbol Ipp IFS IFSM G ALAXY ELECTRICAL ) Parameter SMTPAxxx Value 10/1000 s 8/20 μs 10/560 μs 5/310 μs 10/160 μs 1/20 μs 2/10 μs 8/20 μs t=20m s t=16.6m s t=0.2s t=2s t=16.6m s t=20m s Maxim um 50 100 55 65 75 100 150 2.5 30 32 17 9 8.5 9 -55to+150 150 260 Value 20 100 STATIC V BO @ IBO IH C ABSOLUTE MAXIMUM RATINGS (TA=25 Repetitive peak puls e current Unit A Fail safe m ode: m axim um current Non repetitive s urge peak on-s tate current (Sinus oidal) kA A I2t Tstg Tj TL Symbol R th(j-l) R th(j-a) I2t vallue for fusing Storage tem perature range junction tem perature Storage tem perature range Maxim um junction tem perature Parameter Junction to leads Junction to am bient with recom m ended footprint IRM @ VRM I R @ VR DYNAMIC VBO @ I BO A2s THERMAL RESISTANCES Unlt /W /W C Type Device Marking Code T62 T68 T100 T120 T130 T180 T200 T220 T240 T270 I I PP max. max. μA V 56 61 90 108 117 162 180 198 216 243 mA V 62 68 100 120 130 180 200 220 240 270 max. Note1 V mA 85 93 135 160 173 235 262 285 300 350 max. Note2 V mA 82 90 133 160 173 240 267 293 320 360 min. Note3 mA 150 150 150 150 150 150 150 150 150 150 typ. typ. Note4 Note5 pF pF 30 30 20 20 20 15 15 15 15 15 50 45 40 40 35 30 30 30 30 30 SMTPA62 SMTPA68 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA240 SMTPA270 2 1 .0 8 00 800 ELECTRICAL CHARACTERISTICS (T A =25 Symbol V RM IRM VR V BR V BO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous reverse voltage Break down voltage Break over voltage Holding current Break over current Peak pulse current Capacitance ) I BO IH IR I RM V RM V BR V BO V Note2: See test circuit2. Note4: V R=50V bias, V RMS =1V , F=1MHz. Note 1: See f unc tional break over voltage tes t c ircuit 1. Note3: See f unctional holding current test circuit 3. Note5: V R=2V bias, V RMS =1V , F=1MHz. www.galaxycn.com Document Number 0286002 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS: 100V/μs, di/dt