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SOD1F1

SOD1F1

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    SOD1F1 - SURFACE MOUNT RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
SOD1F1 数据手册
BL FEATURES GALAXY ELECTRICAL SOD1F1 --- SOD1F10 REVERSE VOLTAGE: 100 - 1000 V CURRENT: 1.0 A SOD - 123FL Cathode Band Top View SURFACE MOUNT RECTIFIER ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction ◇ High temperature soldering: 250℃/10 seconds at terminals 1.8 0.1 1.0 0.2 5° 2.8 0.1 0.05 0.30 0.98 0.1 MECHANICAL DATA ◇ Case:JEDEC SOD-123FL,molded plastic over passivated chip ◇ Terminals:Solder Plated, solderable per MIL-STD-750, Method 2026 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.003 ounces, 0.01 gram ◇ Mounting position: Any 5 0.60 0.25 3.7 0.2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ℃ ambient temperature unless otherwise specified. Single hase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. ABSOLUTE RATINGS SOD1F1 SOD1F2 SOD1F4 SOD1F6 SOD1F8 SOD1F10 Device marking code Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forword rectified current T A=65℃ (NOTE 1) UNITS V V V A FB VRRM VRMS VDC I(AV) 100 70 100 FD 200 140 200 FG 400 280 400 1.0 FJ 600 420 600 FK 800 560 800 FM 1000 700 1000 Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load T L=25℃ (NOTE 2) IFSM 25 A Typical thermal resistance Rj θ A trr Tj TSTG 2 180 150 250 - 55 --- + 150 - 55 --- + 150 500 K/W ns ℃ ℃ www.galaxycn.com Maximum reverse recovery time (NOTE 3) Operating temperature range Storage temperature range NOTES:1.Averaged over any 20 ms period. 2. Thermal resistance junction to ambient, 6.0 mm coppeer pads to each terminal. 3.Measured with I F=0.5A, IR=1A, Irr=0.25A. Document Number 0280072 BLGALAXY ELECTRICAL 1. ELECTRICAL CHARACTERISTICS Parameter Maximum instantaneous (NOTE 4) forward voltage at 1.0A Maximum DC reverse current @TA=25℃ at rated DC blockjing voltage @T A=125℃ Typical junction capacitance (NOTE 5) NOTES: 4.Pulse test:300 µs pulse width,1% duty cycle. 5.Measured at 1.0MHz and applied average voltage of 4.0V DC. Symbol VF Min - Typ. 4 Max. 1.3 5.0 Unit V IR Cj µA 50 pF www.galaxycn.com Document Number 0280072 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.1 --TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT SOD1F1 --- SOD1F10 FIG.2 -- TYPICAL JUNCTION CAPACITANCE 100 10 4 T J =25 Pulse Width=300us 10 9 AMPERES 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0 .6 0.8 1.0 1.2 1.4 1.6 CAPACITANCE, pF 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 INSTANTANEOUS FORWARD VOLTAGE,V REVERSE VOLTAGE,VOLTS FIG.3 -- TYPICAL INSTANTANEOUS REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT FIG.4 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT, AMPERES 100 TJ = 150°C 1.2 Resistive or Inductive Load 1.0 10 TJ = 125°C TJ = 100°C 0.8 µ AMPERES 1 0.6 0.4 TJ = 75°C TJ = 50°C 0.1 0.2 TJ = 25°C 3.0 x 3.0mm 40 µm Thick Copper Pad Areas 0 20 40 60 80 100 120 140 160 0.01 0 0 100 200 300 400 500 600 700 800 900 INSTANTANEOUS REVERSE VOLTAGE,V AMBIENT TEMPERATURE, Document Number 0280072 BLGALAXY ELECTRICAL www.galaxycn.com 3.
SOD1F1 价格&库存

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