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SODDB4

SODDB4

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    SODDB4 - SURFACE MOUNT RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
SODDB4 数据手册
BL GALAXY ELECTRICAL SURFACE MOUNT RECTIFIER SODDB3 、 SODDB4 VBO: 28 -- 45 V FEATURES ◇The three layer,two terminal,axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts.These diacs are intended for use in thyrisitors phase control, circuits for lamp dimming,universal motor speed control,and heat control. 5 SOD-123FL 1.8 0.1 1.0 0.2 5° 2.8 0.1 0.05 0.30 0.98 0.1 0.60 0.25 MECHANICAL DATA ◇ Case:JEDEC SOD-123FL,molded plastic over passivated chip ◇ Weight: 0.006 ounces, 0.02 gram 3.7 0.2 ABSOLUTE RATINGS Parameters Device marking code Power dissipation on printed circuit (L=10mm) T A= 50 ℃ Repetitive peak on-state current tp=20µs, f=120Hz Operating junction temperature Storage temperature Pc ITRM Tj TSTG SODDB3 DB 150 2.0 - 40 --- + 125 - 40 --- + 125 SODDB4 DC UNITS mW A ℃ ℃ ELECTRICAL CHARACTERISTICS Parameters Test Conditions C=22nF** See FIG.1 C=22nF** See FIG.1 ∆I =(IBO→ IF=10mA) See FIG.1 See FIG.2 C=22nF** See FIG.3 VR=0.5VBO Min Typ Max Max SODDB3 SODDB4 28 32 36 ± 3.0 35 40 45 UNITS Breakover voltage * VBO |+VBO||-VBO| |±∆V| VO IBO tr IR V Breakover voltage symmetry V Dynamic breakover voltage * Output voltage * Breakover current * Rise time* Leakage current NOTE: * Min Min Max Typ Max 5.0 5.0 100 1.5 10 V V µA µs µA www.galaxycn.com * Electrical characteristics applicable in both forward and reverse directions. ** Connected in parallel with the devices. Document Number 0280061 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE SODDB3.SODDB4 FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE +IF 10mA 10k 500k D.U.T -V I BO IB 0.5VBO +V 220V 60Hz 0.1 F R=20 VO V VBO -IF FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A FIG.4--POWER DISSIPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) P(m ) W 160 140 90% IP 120 100 80 60 10% tr 40 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tam C) b( o FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) FIG.6--PEAK PULSEE CURRENT VERENT VERSUS PULSE DURATION(MAXIMUM VALUES) ITRM(A ) 1.08 VBO(TJ) VBO(TJ=25 ) 2 1.06 TJ( ) 1 f=100H z T in J itial=25 1.04 0.1 tp(µS ) 1.02 1.00 25 50 75 100 125 0.01 10 100 1000 10000 www.galaxycn.com Document Number 0280061 BLGALAXY ELECTRICAL 2.
SODDB4 价格&库存

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