TBSS123

N-Channel Enhancement Mode MOSFET TBSS123 Features  Low on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  Halogen free  Qualified to AEC-Q101 standards for high reliability TBSS123 TBSS123W SOT-23 SOT-323 Typical Applications  Switching application TBSS123-3L Mechanical Data SOT-23-3L  Case: SOT-23, SOT-323, SOT-23-3L  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208 Ordering Information Part Number Package Shipping Quantity Marking Code TBSS123 SOT-23 3000 pcs / Tape & Reel B123 TBSS123W SOT-323 3000 pcs / Tape & Reel B123 TBSS123-3L SOT-23-3L 3000 pcs / Tape & Reel B123 Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID 170 mA Pulsed Drain Current *4 IDM 680 mA MTM0166A: July 2020 www.gmesemi.com 1 N-Channel Enhancement Mode MOSFET TBSS123 Thermal Characteristics Parameter Symbol Value Unit 0.35 W 0.2 W SOT-23-3L 0.35 W SOT-23 357 °C/W 625 °C/W 357 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C SOT-23 Power Dissipation SOT-323 Thermal Resistance Junction-to-Air SOT-323 PD RθJA SOT-23-3L Operating Junction Temperature Range Storage Temperature Range Electrical Characteristics (@ TA = 25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit VGS = 0V, ID = 250μA 100 - - V VDS = 100V, VGS = 0V - - 1 μA VDS = 20V, VGS = 0V - - 10 nA VGS = ±20V, VDS = 0V - - ±1 μA VGS = 10V, ID = 0.17A - 3.0 6 VGS = 4.5V, ID = 0.17A - 3.5 10 VDS = VGS, ID = 250μA 1 1.9 2.8 Static Characteristics VDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current On Characteristics RDS(ON) VGS(TH) *2 Static Drain-Source On-resistance Static Drain-Source On-resistance Dynamic Characteristics Input Capacitance VGS = 0V - 43 - Coss Output Capacitance VDS = 20V - 15 - Crss Reverse Transfer Capacitance f = 1.0MHz - 2.8 - - - 8 Switching Characteristics pF *3 td(on) Turn-on Delay Time tr Turn-on Rise Time VDD = 30V, ID = 0.28A - - 8 Turn-Off Delay Time VGS = 10V, RG = 50Ω - - 13 - - 16 - 0.85 1.3 tf V *3 Ciss td(off) Ω Turn-Off Fall Time ns Source-Drain Diode Characteristics VSD Diode Forward Voltage *1 IS = 0.3A, VGS = 0V V Notes: 1、 Surface Mounted on FR4 Board, and standard footprint, t ≤ 10 sec 2、 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% 3、 Guaranteed by design, not subject to production 4、 Pulse width limited by maximum junction temperature MTM0166A: July 2020 www.gmesemi.com 2 N-Channel Enhancement Mode MOSFET TBSS123 Ratings and Characteristic Curves (@ TA = 25℃ unless otherwise specified) MTM0166A: July 2020 www.gmesemi.com 3 N-Channel Enhancement Mode MOSFET TBSS123 Package Outline Dimensions (Unit: mm) SOT-23 SOT-23 A E K Dimension Min. Max. A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 B J D G H C SOT-323 SOT-323 C E K B A D J H G Dimension Min. Max. A 2.00 2.20 B 1.15 1.35 C 0.90 1.10 D 0.15 0.35 E 0.25 0.40 G 1.20 1.40 H 0.02 0.10 J 0.05 0.15 K 2.20 2.40 SOT-23-3L MTM0166A: July 2020 SOT-23-3L www.gmesemi.com Dimension Min. Max. A 2.80 3.00 B 1.50 1.70 C 1.00 1.20 D 0.35 0.45 E 0.35 0.55 G 1.80 2.00 H 0.02 0.10 J 0.10 0.20 K 2.60 3.00 4 N-Channel Enhancement Mode MOSFET TBSS123 Mounting Pad Layout (Unit: mm) SOT-23 0.95 0.95 2.00 0.90 0.80 SOT-323 0.65 0.65 1.90 0.90 0.70 SOT-23-3L IMPORTANT NOTICE Changzhou Galaxy Century Microelectronics (GME) reserves the right to make changes without further notice to any product information (copyrighted) herein to make corrections, modifications, improvements, or other changes. GME does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. MTM0166A: July 2020 www.gmesemi.com 5