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TVR4N

TVR4N

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    TVR4N - FAST RECOVERY RECTIFIER - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
TVR4N 数据手册
BL GALAXY ELECTRICAL FAST RECOVERY RECT IFIER F EATURES L ow cos t D iffus ed junction L ow leakage L ow forward voltage drop H igh current capability E as ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 TVR4J---TVR4N VOLTAGE RANGE: 600 ---1000 V CURRENT: 1.5 A D O - 15 MECHANICAL DATA C as e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 P olarity: Color band denotes cathode Weight: 0.014 ounces ,0.39 gram s Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS R atings at 25 a m bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. TVR4J Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 TVR4N 1000 700 1000 1.5 UNITS V V V A V RRM V RMS V DC IF(AV) 600 420 600 Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load Maximum instantaneous f orw ard voltage @ 1.5 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 IFSM 50.0 A VF IR t rr CJ Rθ JA TJ TSTG 1.3 5.0 100.0 1000 20 40 -55----+150 -55----+150 V A ns pF /W Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range N OTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Therm al resistance f rom junction to am bient. Document Number 0261070 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 N.1. 10 N.1. TVR4J - - - TVR4N trr +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. (-) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A -1.0A NOTE S:1.RISETIM =7ns M INP IM E AN =1M .22pF E AX. UT P D CE 2.R TIM =10ns M SOURCEIM E ISE E AX. P DANCE =5O SE TIM BASEFOR50/100 ns /cm TE 1cm FIG.2 --FORWARD DERATING CURVE PEAK FORWARD SURGE CURRENT AMPERES 50 FIG.3 --PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT AMPERES 1.50 1.25 40 TJ=125℃ 8.3ms Single Half Sine-Wave 1.00 30 .75 20 .50 Single Phase Half Wave 60H Z Resistive or Inductive Load 25 50 75 100 125 150 175 10 .25 0 0 0 20 40 60 80 100 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz FIG.4--TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT AMPERES FIG.5-- TYPICAL JUNCTION CAPACITANCE 100 10 TJ =25 Pulse Width=300µS 100 60 JUNCTION CAPACITANCE,pF 4 2 1.0 0.4 0.2 0.1 0.0 6 0 .0 4 0.0 2 0.0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 40 20 10 4 TJ=25 f=1M Hz 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0261070 BLGALAXY ELECTRICAL 2.
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