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UF5405G

UF5405G

  • 厂商:

    BILIN(银河)

  • 封装:

  • 描述:

    UF5405G - GLASS PASSIVATED RECTIFIERS - Galaxy Semi-Conductor Holdings Limited

  • 数据手册
  • 价格&库存
UF5405G 数据手册
BL FEATURES GALAXY ELECTRICAL UF5400G -- UF5408G VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A GLASS PASSIVATED RECTIFIERS Glass passivated junction Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 DO - 27 v MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 P olarity: Color band denotes cathode W eight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UF UF UF UF UF UF UF UF UF UNITS 5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 3.0 500 350 500 600 420 600 800 560 800 1000 700 1000 V V V A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 150.0 A Maximum instantaneous forw ard voltage v at 3.0 A Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance @TA =25 @TA =100 (Note1) (Note2) (Note3) VF IR trr CJ RθJA TJ TSTG 1.0 10.0 100.0 50 45 20 - 55 ---- + 175 - 55 ---- + 175 1.7 V A 75 ns pF /W Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. www.galaxycn.com 3. Thermal resistance junction to ambient. Document Number 0269012 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES UF5400G --- UF5408G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 50 N 1. 10 N 1. +0.5A D.U.T. (+) 50VDC (approx) (-) (-) P ULSE GENERATOR (NOTE2) (-) 0 -0.25A 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT FIG.3 -- FORWARD DERATING CURVE 3.0 z U F 5 4 0 0 G --U F 5 4 0 4 G AVERAGE FORWARD CURRENT 100 2.5 2.0 10 AMPERES AMPERES 1 1.5 1.0 0.5 0 Single Phase Half Wave 60HZ Resistive or Inductive Load 0 .1 U F 5 4 0 5 G --U F 5 4 0 8 G      T J=25 P u ls e w id th = 3 0 0 s 0 .0 1 0 .4 0 .6 0 .8 1 .0 20 40 60 80 100 120 140 160 180 1 .2 1 .4 1 .6 1 .8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS A MBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT FIG.5 -- PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 80 70 60 50 40 30 20 10 0.1 1 4 10 100 1000 TJ=25   f=1MHz 150 125 100 8.3ms Single Half Sine-Wave AMPERES 75 50 25 0 1 2 5 10 20 50 100 REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz www.galaxycn.com Document Number 0269012 BLGALAXY ELECTRICAL 2.
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