2N2369A

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO 15 V Collector -Emitter Voltage VCES 40 V Collector -Emitter Voltage VCBO 40 V Collector -Base Voltage VEBO 4.5 V Emitter -Base Voltage IC 200 mA Collector Current Continuous 500 mA Collector Current Peak(10us pulse) IC(peak) PD 360 mW Power Dissipation@ Ta=25 degC 2.06 mW/deg C Derate Above 25 deg C PD 1.2 W @Tc=25 deg C PD 0.68 W @Tc=100 deg C 6.85 mW/deg C Derate Above100 deg C Tj, Tstg -65 to +200 deg C Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB=0 Collector -Emitter Voltage VCES IC=10uA, VBE=0 >40 >40 V Collector -Emitter Voltage VCBO IC=10uA, IE=0 >40 >40 V Collector -Base Voltage VEBO IE=10uA, IC=0 >4.5 >4.5 V Emitter -Base Voltage ICBO VCB=20V, IE=0