2N5551

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE Boca Semiconductor Corp. BSC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE VCEO 160 Collector -Emitter Voltage VCBO 180 Collector -Base Voltage VEBO 6.0 Emitter -Base Voltage IC 600 Collector Current Continuous PD 625 Power Dissipation @Ta=25 degC 5.0 Derate Above 25 deg C PD 1.5 Power Dissipation @Tc=25 degC 12 Derate Above 25 deg C Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) 125 Junction to Case Rth(j-a) (1) 357 Junction to Ambient (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA,IB=0 160 Collector -Emitter Voltage VCBO IC=100uA.IE=0 180 Collector -Base Voltage VEBO IE=10uA, IC=-0 6.0 Emitter -Base Voltage ICBO VCB=160V, IE=0 Collector-Cut off Current Ta=100 deg C VCB=160V, IE=0 IEBO VEB=4V, IC=0 hFE* IC=1mA,VCE=5V IC=10mA,VCE=5V IC=50mA,VCE=5V VCE(Sat)* IC=10mA,IB=1mA IC=50mA,IB=5mA VBE(Sat) * IC=10mA,IB=1mA IC=50mA,IB=5mA UNIT V V V mA mW mw/deg C W mw/deg C deg C deg C/W deg C/W MAX 50 UNIT V V V nA Emitter-Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 80 80 30 - - 50 50 250 0.15 0.2 1.0 1.0 uA nA V V V V http://www.bocasemi.com Continental Device India Limited Data Sheet page: 1 Page 1 of 3 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN Dynamic Characteristics hfe IC=1mA, VCE=10V 50 Small Signal Current Gain f=1KHz Transition Frequency ft VCE=10V,IC=10mA, f=100MHz VCB=10V, IE=0 f=1MHz VEB=0.5V, IC=0 f=1MHz VCE=5V, IC=250uA R=1kohm, f=10Hz to 15.7kHz 100 2N5551 TYP - MAX 200 UNIT - 300 MHz Output Capacitance Cob - - 6.0 pF Input Capacitance Cib - - 20 pF Noise Figure NF - - 8.0 dB *Pulse Test: Pulse Width=300us, Duty Cycle=2% TO-92 Plastic Package B TO-92 Transistors on Tape and Ammo Pack Amm o Pack S ty le M EC H AN IC AL D ATA T P h A A1 (p) Ad hesive Ta p e on To p S id e FEE D C arrier Strip A h LA BE L FL AT SIDE 8.2" 321 H1 H0 L W2 Wo W1 W t1 K t F1 F P2 Po F2 Do 1 3" 1.7 7" D 3 E 2 1 Flat S id e o f Tran sistor and Ad hesive Tape Visib le 20 00 pcs./A m mo P ack All dim ensions in m m unless specified otherw ise ITEM BOD Y W IDT H BOD Y H EIG HT BOD Y T HICKNESS PITCH OF C OM PO NENT FEED HO LE PIT CH SYM BO L A1 A T P Po SPEC IFICATIO N REM ARKS M IN. NO M . M AX. TO L . 4.8 4.0 5.2 4.8 4.2 3.9 12.7 ±1 12.7 ± 0.3 CUM U LAT IVE PIT CH ERRO R 1.0 m m /20 PITCH 6.35 ± 0.4 TO BE M EASU RED AT BOT TOM O F CLIN CH +0.6 5.08 -0.2 0 1 AT TO P OF BO DY 18 ± 0.5 6 ± 0.2 9 +0.7 -0.5 0.5 ± 0.2 16 ± 0.5 23.25 11.0 4 ± 0.2 1.2 t1 0.3 - 0.6 2.54 +0.4 -0.1 3 6N D G AA SEC AA F F DIM A MIN. 4.32 4.45 3.18 0.41 0.35 MAX. 5.33 5.20 4.19 0.55 0.50 FEED HO LE CENTRE TO CO M PONENT CENTRE DISTAN CE BETW EEN O UTER LEADS CO M PONENT ALIGN M EN T TAPE W IDTH HO LD-DO W N TAPE W IDTH HO LE PO SITIO N HO LD-DO W N TAPE POSIT IO N LEAD W IRE C LINCH HEIG HT CO M PONENT HEIGHT LENG TH O F SNIPPED LEADS FEED HO LE DIAM ET ER TO TAL TAPE THIC KNESS LEAD - TO - LEAD DISTANCEF 1, CLINC H HEIGHT PULL - O UT F OR CE P2 F h W Wo W1 W2 Ho H1 L Do t F2 H2 ( P) 321 All diminsions in mm. B C D E F G H K H C PIN CONFIGURATION 1. COLLECTOR 2. BASE 3. EMITTER 5 DEG 1.14 1.40 1.14 1.53 12.70 — http://www.bocasemi.com Packing Detail PACKAGE Details TO-92 Bulk TO-92 T&A 1K/polybag 2K/ammo box STANDARD PACK Net Weight/Qty 200 gm/1K pcs 645 gm/2K pcs Size N OT ES 1 . M A X IM U M A L IG N M E N T D E V IAT IO N B E T W E E N L E A D S N O T T O B E G R E AT E R T H A N 0 .2 m m . 2 . M A X IM U M N O N -C U M U L AT IV E VA R IAT IO N B E T W E E N TA P E F E E D H O L E S S H A L L N O T E X C E E D 1 m m IN 2 0 P IT C H E S . 3 . H O L D D O W N TA P E N O T TO E X C E E D B E Y O N D T H E E D G E (S ) O F C A R R IE R TA P E A N D T H E R E S H A L L B E N O E X P O S U R E O F A D H E S IV E . 4 . N O M O R E T H A N 3 C O N S E C U T IV E M IS S IN G C O M P O N E N T S A R E P E R M IT T E D . 5 . A TA P E T R A IL E R , H AV IN G AT L E A S T T H R E E F E E D H O L E S A R E R E Q U IR E D A F T E R T H E L A S T C O M P O N E N T. 6 . S P L IC E S S H A L L N O T IN T E R F E R E W IT H T H E S P R O C K E T F E E D H O L E S . INNER CARTON BOX Qty 5.0K 2.0K Size 3" x 7.5" x 7.5" 12.5" x 8" x 1.8" Data Sheet OUTER CARTON BOX Qty 80.0K 32.0K Gr Wt 23 kgs 12.5 kgs 17" x 15" x 13.5" 17" x 15" x 13.5" Continental Device India Limited Page 2 of 3