2FAE-C15RLF

oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features ■ ■ ■ ■ ■ Applications ■ ■ ■ ■ Lead free versions available RoHS compliant (lead free version)* Bidirectional EMI filtering ESD protection Protects 6 data lines Cell phones PDAs and notebooks Digital cameras MP3 players and GPS *R 2FAE-C15R - Integrated Passive & Active Device using CSP General Information The 2FAE-C15R device, manufactured using Thin Film on Silicon technology, provides ESD protection and EMI filtering for the data port of portable electronic devices such as cell phones, modems and PDAs. The device incorporates six low pass filter channels where each channel has a series 100 ohm resistor assuring a minimum of -30 dB attenuation from 800 MHz to 3 GHz. The device is suitable for EMI filtering of GSM, CDMA, W-CDMA, WLAN and Bluetooth frequencies. Each internal and external port of the six channels includes a TVS diode for ESD protection. The ESD protection provided by the component enables a data port to withstand a minimum ±8 KV Contact / ±15 KV Air Discharge per the ESD test method specified in IEC 61000-4-2. The device measures 1.33 mm x 2.96 mm and is available in a 15 bump CSP package intended to be mounted directly onto an FR4 printed circuit board. The CSP device meets typical thermal cycle and bend test specifications without the use of an underfill material. SOLDER BUMPS SILICON DIE Electrical & Thermal Characteristics Electrical Characteristics (TA = 25 °C unless otherwise noted) Per Line Specification Resistance Capacitance @ 2.5 V 1 MHz Rated Standoff Voltage Breakdown Voltage @ 1 mA Forward Voltage @ 10 mA Leakage Current @ 3.3 V Filter Attenuation @ 800 - 3000 MHz ESD Protection: IEC 61000-4-2 Contact Discharge Air Discharge Symbol R C VWM VBR VF IR S21 Minimum 80 44 6.0 Nominal 100 54 5.0 0.8 0.1 -35 Maximum 120 64 Unit Ω pF V V V µA dB kV kV 0.5 -30 ±8 ±15 Thermal Characteristics (TA = 25 °C unless otherwise noted) Operating Temperature Range Storage Temperature Range Power Dissipation Per Resistor TJ TSTG PD -40 -55 25 25 +85 +150 100 °C °C mW Reliable Electronic Solutions Asia-Pacific: TEL +886- (0)2 25624117 • FAX +886- (0)2 25624116 Europe: TEL +41-41 768 5555 • FAX +41-41 768 5510 The Americas: TEL +1-951 781-5492 • FAX +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 2FAE-C15R - Integrated Passive & Active Device using CSP Mechanical Characteristics This is a silicon-based device and is packaged using chip scale packaging technology. Solder bumps, formed on the silicon die, provide the interconnect medium from die to PCB. The bumps are arranged on the die in a regular grid formation. The grid pitch is 0.5 mm and the dimensions for the packaged device are shown below. 2.915 - 3.005 (0.115 - 0.118) 0.3 (0.012) DIA. 0.435 (0.017) 0.432 - 0.559 (0.017 - 0.022) C1 C2 C3 C4 C5 C6 1.285 - 1.375 (0.051 - 0.054) B1 B2 B3 A1 A2 A3 A4 A5 A6 0.330 - 0.457 (0.013 - 0.018) 0.50 (0.020) 0.25 (0.01) 0.180 - 0.280 (0.007 - 0.011) 0.435 (0.017) 0.180 - 0.280 (0.007 - 0.011) MILLIMETERS (INCHES) DIMENSIONS = Reliability Data Reliability data is gathered on an ongoing basis for Bourns® Integrated Passive and Active Devices. “Package level” testing of the integrity of the solder joint is carried out on an independent Daisy-Chain test device. A 25-Pin Daisy Chain component is available from Bourns for this purpose (part number 2TAD-C25R). This is a 5 x 5 array featuring 0.5 mm pitch solder bumps. The Distance to Neutral Point (DNP) on that component is similar to that of the 2FAE-C15R and is thus deemed suitable for Thermal Cycle testing. “Silicon level” reliability performance is based on similarity to other integrated passive CSP devices from Bourns. Frequency Response 0 -10 -20 -30 -40 -50 -60 0.1 Loss - dB 1.0 10.0 100.0 1000.0 1000.0 Frequency - MHz Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 2FAE-C15R - Integrated Passive & Active Device using CSP Block Diagram The CSP device block diagram below includes the pin names and basic electrical connections associated with each channel. EXT1 R1: 100 ohms INT1 PCB Design and SMT Processing Please consult the “Bourns Design Guide Using CSP” for notes on PCB design and SMT Processing. How to Order GND 2 FAE - C15R ____ Thinfilm Model Chipscale No. of Solder Bumps Packaging Option R = Tape and Reel Packaged 3000 pcs. / 7 ” reel Terminations LF = Sn/Ag/Cu (lead free) Blank = Sn/Pb EXT2 R2: 100 ohms INT2 EXT3 R3: 100 ohms INT3 GND EXT4 R4: 100 ohms INT4 EXT5 R5: 100 ohms INT5 GND EXT6 R6: 100 ohms INT6 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 2FAE-C15R - Integrated Passive & Active Device using CSP Device Pin Out The pin-out for the device is shown below with the bumps facing up. A EXT1 B C INT1 1 2 3 4 5 6 GND x 3 EXT2 INT2 EXT3 INT3 Pin Out A1 A2 A3 A4 A5 A6 B1 B2 B3 Function EXT1 EXT2 EXT3 EXT4 EXT5 EXT6 GND GND GND Pin Out C1 C2 C3 C4 C5 C6 Function INT1 INT2 INT3 INT4 INT5 INT6 EXT4 INT4 EXT5 INT5 EXT6 INT6 Packaging The surface mount product is packaged in an 8 mm x 4 mm Tape and Reel format per EIA-481 standard. TOP SIDE VIEW (INTO COMPONENT POCKET) DIMENSIONS = 0.3 ± 0.05 (.01 ± .002) 2.00 ± 0.05 (.08 ± .002) 4.0 ± 0.1 (.16 ± .004) 1.5 ± 0.1/-0 (.06 ± .004/-0) DIA. MILLIMETERS (INCHES) 1.75 ± 0.10 (.07 ± .004) R 0.3 MAX. (0.01) 8.0 ± 0.3 (.31 ± .01) 3.5 ± 0.05 (.14 ± .002) 1.52 ± 0.1 (.06 ± .004) 4.0 ± 0.1 (.16 ± .004) R 0.25 TYP. (0.010) 0.76 ± 0.1 (.03 ± .004) 3.18 ± 0.1 (0.13 ± 0.004) ORIENTATION OF COMPONENT IN POCKET BACKSIDE FACING UP COPYRIGHT© 2004, BOURNS, INC. LITHO IN U.S.A. 08/04 e/IPA0411 2FAE-C15R REV. B, 02/05 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.