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BD243A

BD243A

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

  • 描述:

    BD243A - NPN SILICON POWER TRANSISTORS - Bourns Electronic Solutions

  • 详情介绍
  • 数据手册
  • 价格&库存
BD243A 数据手册
BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD244 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD243 Collector-emitter voltage (RBE = 100 Ω) BD243A BD243B BD243C BD243 Collector-emitter voltage (IC = 30 mA) BD243A BD243B BD243C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD243 V(BR)CEO IC = 30 mA (see Note 5) VCE = 55 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 70 V VCE = 90 V VCE = 115 V ICEO IEBO hFE V CE(sat) VBE hfe VCE = 30 V VCE = 60 V VEB = VCE = VCE = IB = VCE = 5V 4V 4V 1A 4V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 0.3 A IC = IC = IC = 3A 6A 6A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 30 15 1.5 2 V V IB = 0 BD243A BD243B BD243C BD243 BD243A BD243B BD243C BD243/243A BD243B/243C MIN 45 60 80 100 0.4 0.4 0.4 0.4 0.7 0.7 1 mA mA mA V TYP MAX UNIT VCE = 10 V VCE = 10 V IC = 0.5 A IC = 0.5 A |hfe | NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.92 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = 1 A VBE(off) = -3.7 V IB(on) = 0.1 A RL = 2 0 Ω † MIN IB(off) = -0.1 A tp = 20 µs, dc ≤ 2% TYP 0.3 1 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2% hFE - DC Current Gain VCE(sat) - Collector-Emitter Saturation Voltage - V 1000 TCS633AH COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 TCS633AE IC = 300 mA IC = 1 A IC = 3 A IC = 6 A 1·0 100 10 0·1 1·0 0·1 1·0 IC - Collector Current - A 10 0·01 0·001 0·01 0·1 IB - Base Current - A 1·0 10 Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·2 VCE = 4 V TC = 25°C VBE - Base-Emitter Voltage - V 1·1 TCS633AF 1·0 0·9 0·8 0·7 0·6 0·1 1·0 IC - Collector Current - A 10 Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS633AD IC - Collector Current - A 10 tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 1·0 0·1 BD243 BD243A BD243B BD243C 10 100 1000 0·01 1·0 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C TIS633AB Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5
BD243A
### 物料型号 - BD243 - BD243A - BD243B - BD243C

### 器件简介 该系列晶体管由BoURNS设计,用于与BD244系列互补使用。它们是NPN硅功率晶体管,适用于65W在25°C的外壳温度下工作,具有6A的连续集电极电流和10A的峰值集电极电流,也提供客户指定的选择。

### 引脚分配 - Pin 2与安装底座电气连接。

### 参数特性 #### 绝对最大额定值(25°C外壳温度) - 集电极-发射极电压(Rge = 100Ω):BD243为55V,BD243A为70V,BD243B为90V,BD243C为115V。 - 发射极-基极电压(VEBO):5V。 - 连续集电极电流(Ic):6A。 - 峰值集电极电流(CM):10A。 - 连续基极电流(Ib):3A。 - 连续器件耗散功率(Ptot)在25°C外壳温度下:65W;在25°C自由空气温度下:2W。 - 未 clamped 感性负载能量(V2Llo2):62.5mJ。 - 工作结温范围:-65至+150°C。 - 存储温度范围:-65至+150°C。 - 引脚温度:3.2mm距离外壳10秒:250°C。

#### 电气特性(25°C外壳温度) - 击穿电压(V(BR)CEO):BD243为45V,BD243C为100V。 - 集电极-发射极截止电流(ICES):0.4mA。 - 发射极截止电流(IEBO):1mA。 - 直流电流增益(hFE):最小值为15至30。 - 集电极-发射极饱和电压(VcE(sat)):1.5V。 - 基极-发射极电压(VBE):2V。

### 功能详解 晶体管设计用于高功率应用,具有高耐压和大电流容量。它们能够在极端温度下工作,并且具有客户定制选项。

### 应用信息 适用于需要高功率和高耐压的场合,如电源、电机驱动和工业控制系统。

### 封装信息 - TO-220 3引脚塑料法兰安装封装。 - 单列直插式封装,电路安装在引线框架上,并被封装在塑料化合物内,能够在不变形的情况下承受焊接温度,并且在高湿度条件下电路性能稳定。引脚无需额外清洁或加工即可用于焊接组装。
BD243A 价格&库存

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