BD250B

BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD249 Series 125 W at 25°C Case Temperature 25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD250 Collector-emitter voltage (RBE = 100 Ω) BD250A BD250B BD250C BD250 Collector-emitter voltage (IC = -30 mA) BD250A BD250B BD250C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -25 -40 -5 125 3 90 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = - 20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD250 V(BR)CEO IC = -30 mA (see Note 5) VCE = -55 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = -70 V VCE = -90 V VCE = -115 V ICEO IEBO VCE = -30 V VCE = -60 V VEB = VCE = VCE = VCE = IB = IB = VCE = VCE = -5 V -4 V -4 V -4 V -1.5 A -5 A -4 V -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = -1.5 A IC = -15 A IC = -25 A IC = -15 A IC = -25 A IC = -15 A IC = -25 A IC = IC = - 1A -1 A (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 25 3 (see Notes 5 and 6) 25 10 5 -1.8 -4 -2 -4 V V IB = 0 BD250A BD250B BD250C BD250 BD250A BD250B BD250C BD250/250A BD250B/250C MIN -45 -60 -80 -100 -0.7 -0.7 -0.7 -0.7 -1 -1 -1 mA mA mA V TYP MAX UNIT hFE V CE(sat) VBE hfe VCE = -10 V VCE = -10 V |hfe | NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1 42 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -5 A VBE(off) = 5 V IB(on) = -0.5 A RL = 5 Ω † MIN IB(off) = 0.5 A tp = 20 µs, dc ≤ 2% TYP 0.2 0.4 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% TCS636AD COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V -10 TCS636AB hFE - DC Current Gain 100 -1·0 10 -0·1 IC = IC = IC = IC = -0·1 -1·0 -10 -25 A -20 A -15 A -10 A -100 1 -0·1 -1·0 -10 -100 -0·01 -0·001 IC = -300 mA IC = -1 A IC = -3 A -0·01 IC - Collector Current - A IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·8 VCE = -4 V TC = 25°C TCS636AC VBE - Base-Emitter Voltage - V -1·6 -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 -100 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS636AB IC - Collector Current - A -10 tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -1·0 -0·1 BD250 BD250A BD250B BD250C -10 -100 -1000 -0·01 -1·0 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 140 Ptot - Maximum Power Dissipation - W TIS635AA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15,2 14,7 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5