BD543C-S

BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD544 Series TO-220 PACKAGE (TOP VIEW) 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. This series is obsolete and not recommended for new designs. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD543 Collector-base voltage (IE = 0) BD543A V CBO BD543C BD543 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) BD543A BD543B BD543C V CEO VEBO Lead temperature 3.2 mm from case for 10 seconds V 100 40 60 80 100 V ICM 10 A Ptot 2 Operating free air temperature range Operating junction temperature range 80 V Ptot Storage temperature range 60 5 IC Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) UNIT 40 E T E L O S B O BD543B VALUE 8 A 70 W TA -65 to +150 °C Tstg -65 to +150 Tj TL -65 to +150 260 W °C °C °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 4) BD543 40 BD543A 60 BD543B 80 BD543C 100 TYP MAX V VCE = 40 V VBE = 0 BD543 0.4 Collector-emitter VCE = 60 V VBE = 0 BD543A 0.4 cut-off current VCE = 80 V VBE = 0 BD543B 0.4 VCE = 100 V VBE = 0 BD543C 0.4 Collector cut-off VCE = 30 V IB = 0 BD543/543A 0.7 current VCE = 60 V IB = 0 BD543B/543C 0.7 VEB = 5V IC = 0 VCE = 4V IC = 1 A VCE = 4V IC = 3A VCE = 4V IC = 5A IB = 0.3 A IC = 3A IB = 1A IC = 5A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 1 1.6 A IC = 8A 4V IC = 5A VCE = mA mA mA 60 (see Notes 4 and 5) 40 15 0.5 (see Notes 4 and 5) 0.5 E T E L O S B O IB = UNIT (see Notes 4 and 5) VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 V 1 1.4 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.79 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 6 A IB(on) = 0.6 A IB(off) = -0.6 A toff Turn-off time VBE(off) = -4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.6 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
 2 TYP  
 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCS633AI hFE - DC Current Gain VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1·0 0·1 TCS633AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V 1000 IC = 300 mA IC = 1 A IC = 3 A IC = 6 A 1·0 0·1 E T E L O S B O 1·0 0·01 0·001 10 IC - Collector Current - A 0·01 0·1 1·0 10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·2 TCS633AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 1·1 1·0 0·9 0·8 0·7 0·6 0·1 1·0 10 IC - Collector Current - A Figure 3.
  
 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS633AF 1·0 0·1 BD543 BD543A BD543B BD543C E T E L O S B O 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AD Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.