BD544-S

BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD543 Series TO-220 PACKAGE (TOP VIEW) 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. This series is OBSOLETEAND not recommended for new designs. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD544 Collector-base voltage (IE = 0) BD544A V CBO BD544C BD544 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) BD544A BD544B BD544C V CEO VEBO IC ICM Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot Operating free air temperature range Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds UNIT -40 E T E L O S B O BD544B VALUE -60 -80 V -100 -40 -60 -80 -100 -5 -8 -10 V V A A 70 W TA -65 to +150 °C Tstg -65 to +150 Ptot Tj TL 2 -65 to +150 260 W °C °C °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 4) BD544 -40 BD544A -60 BD544B -80 BD544C -100 TYP MAX V VCE = -40 V VBE = 0 BD544 -0.4 Collector-emitter VCE = -60 V VBE = 0 BD544A -0.4 cut-off current VCE = -80 V VBE = 0 BD544B -0.4 VCE = -100 V VBE = 0 BD544C -0.4 Collector cut-off VCE = -30 V IB = 0 BD544/544A -0.7 current VCE = -60 V IB = 0 BD544B/544C -0.7 VEB = -5 V IC = 0 VCE = -4 V IC = -1 A VCE = -4 V IC = -3 A VCE = -4 V IC = -5 A IB = -0.3 A IC = -3 A IB = -1 A IC = -5 A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio -1 -1.6 A IC = - 8A -4 V IC = -5 A VCE = mA mA mA 60 (see Notes 4 and 5) 40 15 -0.5 (see Notes 4 and 5) -0.5 E T E L O S B O IB = UNIT (see Notes 4 and 5) VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 V -1 -1.4 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.79 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -6 A IB(on) = -0.6 A IB(off) = 0.6 A 0.4 µs toff Turn-off time VBE(off) = 4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS634AI VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1·0 -0·1 TCS634AE -10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = -300 mA IC = -1 A IC = -3 A IC = -6 A -1·0 -0·1 E T E L O S B O -1·0 -10 -0·01 -0·001 IC - Collector Current - A -0·01 -0·1 -1·0 -10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·2 TCS634AF VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -1·1 -1·0 -0·9 -0·8 -0·7 -0·6 -0·1 -1·0 -10 IC - Collector Current - A Figure 3.
  
 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS634AF -1·0 -0·1 BD544 BD544A BD544B BD544C E T E L O S B O -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AD Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.