BD743C-S

BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD744 Series TO-220 PACKAGE (TOP VIEW) 90 W at 25°C Case Temperature 15 A Continuous Collector Current 20 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD743 Collector-base voltage (IE = 0) BD743A V CBO BD743C BD743 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current BD743A BD743B BD743C UNIT 50 E T E L O S B O BD743B VALUE V CEO VEBO 70 90 V 110 45 60 80 100 5 IC 15 IB 5 V V A Peak collector current (see Note 1) ICM Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 90 W ½LIC2 90 mJ -65 to +150 °C Continuous base current Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. Ptot 20 2 TA -65 to +150 Tstg -65 to +150 Tj TL 250 A A W °C °C °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICBO ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter TEST CONDITIONS MIN BD743 45 BD743A 60 BD743B 80 BD743C 100 TYP MAX V IC = 30 mA IB = 0 VCE = 50 V VBE = 0 BD743 0.1 VCE = 70 V VBE = 0 BD743A 0.1 VCE = 90 V VBE = 0 BD743B 0.1 Collector cut-off VCE = 110 V VBE = 0 BD743C 0.1 current VCE = 50 V VBE = 0 TC = 125°C BD743 5 VCE = 70 V VBE = 0 TC = 125°C BD743A 5 VCE = 90 V VBE = 0 TC = 125°C BD743B 5 VCE = 110 V VBE = 0 TC = 125°C BD743C Collector cut-off VCE = 30 V IB = 0 BD743/743A 0.1 current VCE = 60 V IB = 0 BD743B/743C 0.1 VEB = 5V IC = 0 VCE = 4V IC = 1 A breakdown voltage Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio (see Note 5) UNIT mA 5 0.5 mA mA 40 E T E L O S B O VCE = 4V IC = 5 A VCE = 4V IC = 15 A IB = 0.5 A IC = 5 A IB = 5A IC = 15 A VCE = 4V IC = 5 A VCE = 4V IC = 15 A VCE = 10 V IC = 1 A f = 1 kHz 25 VCE = 10 V IC = 1 A f = 1 MHz 5 (see Notes 5 and 6) 20 150 5 1 (see Notes 5 and 6) 3 1 (see Notes 5 and 6) 3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.4 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN td Delay time 20 ns tr Rise time IC = 5 A IB(on) = 0.5 A IB(off) = -0.5 A 350 ns ts Storage time VBE(off) = -4.2 V RL = 6 Ω tp = 20 µs, dc ≤ 2% 500 ns tf Fall time 400 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT hFE - DC Current Gain TC = 125°C TC = 25°C TC = -55°C 1·0 IC = 10 IB tp = 300µs, duty cycle < 2% 1·0 0·1 E T E L O S B O VCE = 4 V tp = 300 µs, duty cycle < 2% 10 0·1 TCS637AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS637AA 100 10 100 0·01 0·1 1·0 IC - Collector Current - A TC = -55°C TC = 25°C TC = 125°C 10 100 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT TCS637AC 10 VBE - Base-Emitter Voltage - V VCE = 4 V tp = 300µs, duty cycle < 2% 1·0 TC = -55°C TC = 25°C TC = 125°C 0·1 0·1 1·0 10 100 IC - Collector Current - A Figure 3.
  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS637AA tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 BD743 BD743A BD743B BD743C E T E L O S B O 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS637AA Ptot - Maximum Power Dissipation - W 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.