BD744-S

BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD743 Series TO-220 PACKAGE (TOP VIEW) 90 W at 25°C Case Temperature 15 A Continuous Collector Current 20 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 This series is OBSOLETEAND not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD744 Collector-base voltage (IE = 0) BD744A V CBO BD744C BD744 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current BD744A BD744B BD744C UNIT -50 E T E L O S B O BD744B VALUE V CEO VEBO -70 V -90 -110 -45 -60 V -80 -100 -5 IC -15 IB -5 V A Peak collector current (see Note 1) ICM Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 90 W ½LIC2 90 mJ -65 to +150 °C Continuous base current Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. Ptot -20 2 TA -65 to +150 Tstg -65 to +150 Tj TL 260 A A W °C °C °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = -20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICBO ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter TEST CONDITIONS MIN BD744 -45 BD744A -60 BD744B -80 BD744C -100 TYP MAX V IC = -30 mA IB = 0 VCE = -50 V VBE = 0 BD744 -0.1 VCE = -70 V VBE = 0 BD744A -0.1 VCE = -90 V VBE = 0 BD744B -0.1 Collector cut-off VCE = -110 V VBE = 0 BD744C -0.1 current VCE = -50 V VBE = 0 TC = 125°C BD744 -5 VCE = -70 V VBE = 0 TC = 125°C BD744A -5 VCE = -90 V VBE = 0 TC = 125°C BD744B -5 VCE = -110 V VBE = 0 TC = 125°C BD744C Collector cut-off VCE = -30 V IB = 0 BD744/744A -0.1 current VCE = -60 V IB = 0 BD744B/744C -0.1 VEB = -5 V IC = 0 VCE = -4 V IC = -1 A breakdown voltage Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio (see Note 5) UNIT mA -5 -0.5 mA mA 40 E T E L O S B O VCE = -4 V IC = -5 A VCE = -4 V IC = -15 A IB = -0.5 A IC = -5 A IB = -5 A IC = -15 A VCE = -4 V IC = -5 A VCE = -4 V IC = -15 A VCE = -10 V IC = -1 A f = 1 kHz 25 VCE = -10 V IC = -1 A f = 1 MHz 5 (see Notes 5 and 6) 20 150 5 -1 (see Notes 5 and 6) -3 -1 (see Notes 5 and 6) -3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.4 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN td Delay time 20 ns tr Rise time IC = -5 A IB(on) = -0.5 A IB(off) = 0.5 A 120 ns ts Storage time VBE(off) = 4.2 V RL = 6 Ω tp = 20 µs, dc ≤ 2% 600 ns tf Fall time 300 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
 2 TYP  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = -4 V tp = 300 µs, duty cycle < 2% VCE(sat) - Collector-Emitter Saturation Voltage - V TCS638AA 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = 125°C TC = 25°C TC = -55°C 100 10 -0·1 -1·0 TCS638AB -10 IC = 10 IB tp = 300µs, duty cycle < 2% -1·0 -0·1 E T E L O S B O -10 -100 -0·01 -0·1 -1·0 IC - Collector Current - A TC = -55°C TC = 25°C TC = 125°C -10 -100 IC - Collector Current - A Figure 1. Figure 2. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS638AA tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 BD744 BD744A BD744B BD744C -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 3.
  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS637AA Ptot - Maximum Power Dissipation - W 100 90 80 70 60 50 40 30 20 E T E L O S B O 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4.
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 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.