BD744B

BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD743 Series 90 W at 25°C Case Temperature 15 A Continuous Collector Current 20 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD744 Collector-base voltage (IE = 0) BD744A BD744B BD744C BD744 Collector-emitter voltage (IB = 0) BD744A BD744B BD744C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 TA Tj Tstg TL VCEO V CBO SYMBOL VALUE -50 -70 -90 -110 -45 -60 -80 -100 -5 -15 -20 -5 90 2 90 -65 to +150 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = - 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD744 V(BR)CEO IC = -30 mA IB = 0 (see Note 5) BD744A BD744B BD744C VCE = -50 V VCE = -70 V VCE = -90 V ICBO Collector cut-off current VCE = -110 V VCE = -50 V VCE = -70 V VCE = -90 V VCE = -110 V ICEO IEBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = -30 V VCE = -60 V VEB = VCE = VCE = VCE = IB = IB = VCE = VCE = -5 V -4 V -4 V -4 V -0.5 A -5 A -4 V -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = -1 A IC = -5 A IC = -15 A IC = -5 A IC = -15 A IC = -5 A IC = -15 A IC = -1 A IC = -1 A (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 25 5 (see Notes 5 and 6) 40 20 5 -1 -3 -1 -3 V V 150 TC = 125°C TC = 125°C TC = 125°C TC = 125°C BD744 BD744A BD744B BD744C BD744 BD744A BD744B BD744C BD744/744A BD744B/744C MIN -45 -60 -80 -100 -0.1 -0.1 -0.1 -0.1 -5 -5 -5 -5 -0.1 -0.1 -0.5 mA mA mA V TYP MAX UNIT hFE VCE(sat) VBE hfe VCE = -10 V VCE = -10 V |hfe | NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.4 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER td tr ts tf † TEST CONDITIONS IC = -5 A VBE(off) = 4.2 V IB(on) = -0.5 A RL = 6 Ω † MIN IB(off) = 0.5 A tp = 20 µs, dc ≤ 2% TYP 20 120 600 300 MAX UNIT ns ns ns ns Delay time Rise time Storage time Fall time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = -4 V tp = 300 µs, duty cycle < 2% TCS638AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V -10 IC = 10 IB tp = 300µs, duty cycle < 2% TCS638AB TC = 125°C TC = 25°C TC = -55°C hFE - DC Current Gain -1·0 100 -0·1 TC = -55°C TC = 25°C TC = 125°C -0·01 -0·1 -1·0 -10 -100 10 -0·1 -1·0 -10 -100 IC - Collector Current - A IC - Collector Current - A Figure 1. Figure 2. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS638AA IC - Collector Current - A -10 tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation -1·0 -0·1 BD744 BD744A BD744B BD744C -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum Power Dissipation - W 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C TIS637AA Figure 4. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5