BD745B

BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD746 Series 115 W at 25°C Case Temperature 20 A Continuous Collector Current 25 A Peak Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD745 Collector-base voltage (IE = 0) BD745A BD745B BD745C BD745 Collector-emitter voltage (IB = 0) BD745A BD745B BD745C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 TA Tj Tstg TL VCEO V CBO SYMBOL VALUE 50 70 90 110 45 60 80 100 5 20 25 7 115 3.5 90 -65 to +150 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD745 V(BR)CEO IC = 30 mA IB = 0 (see Note 5) BD745A BD745B BD745C VCE = 50 V VCE = 70 V VCE = 90 V ICBO Collector cut-off current VCE = 110 V VCE = 50 V VCE = 70 V VCE = 90 V VCE = 110 V ICEO IEBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 30 V VCE = 60 V VEB = VCE = VCE = VCE = IB = IB = VCE = VCE = 5V 4V 4V 4V 0.5 A 5A 4V 4V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 1 A IC = 5 A IC = 20 A IC = 5 A IC = 20 A IC = 5 A IC = 20 A IC = 1 A IC = 1 A (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 25 5 (see Notes 5 and 6) 40 20 5 1 3 1 3 V V 150 TC = 125°C TC = 125°C TC = 125°C TC = 125°C BD745 BD745A BD745B BD745C BD745 BD745A BD745B BD745C BD745/745A BD745B/745C MIN 45 60 80 100 0.1 0.1 0.1 0.1 5 5 5 5 0.1 0.1 0.5 mA mA mA V TYP MAX UNIT hFE VCE(sat) VBE hfe VCE = 10 V VCE = 10 V |hfe | NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.1 35.7 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER td tr ts tf † TEST CONDITIONS IC = 5 A VBE(off) = -4.2 V IB(on) = 0.5 A RL = 6 Ω † MIN IB(off) = -0.5 A tp = 20 µs, dc ≤ 2% TYP 20 350 500 400 MAX UNIT ns ns ns ns Delay time Rise time Storage time Fall time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 TCS635AE COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 10 IC = 10 IB tp = 300µs, duty cycle < 2% TCS635AF TC = 125°C TC = 25°C TC = -55°C hFE - DC Current Gain 1·0 0·1 VCE = 4 V tp = 300 µs, duty cycle < 2% 10 0·1 1·0 10 100 IC - Collector Current - A TC = -55°C TC = 25°C TC = 125°C 0·01 0·1 1·0 10 100 IC - Collector Current - A Figure 1. Figure 2. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS635AC IC - Collector Current - A 10 tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation 1·0 0·1 BD745 BD745A BD745B BD745C 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 120 Ptot - Maximum Power Dissipation - W TIS635AB 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15,2 14,7 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5