BD898

BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD896 Collector-base voltage (IE = 0) BD898 BD900 BD902 BD896 Collector-emitter voltage (IB = 0) BD898 BD900 BD902 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating free-air temperature range Operating junction temperature range Storage temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TA Tj Tstg VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD896 V(BR)CEO IC = -100 mA IB = 0 (see Note 3) BD898 BD900 BD902 VCE = -30 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -40 V VCE = -50 V VCB = -45 V VCB = -60 V VCB = -80 V ICBO Collector cut-off current VCB = -100 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V IEBO hFE VCE(sat) VBE(on) VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IE = -5 V -3 V -12 mA -3 V -8 A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -3 A IC = -3 A IC = -3 A IB = 0 TC = 100°C TC = 100°C TC = 100°C TC = 100°C (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 750 -2.5 -2.5 -3.5 V V V BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 MIN -45 -60 -80 -100 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -2 -2 -2 -2 -2 mA mA mA V TYP MAX UNIT NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.79 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -3 A VBE(off) = 3.5 V IB(on) = -12 mA RL = 1 0 Ω † MIN IB(off) = 12 mA tp = 20 µs, dc ≤ 2% TYP 1 5 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS135AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 TCS135AB hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 -1·5 1000 -1·0 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 TC = -40°C TC = 25°C TC = 100°C -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C TCS135AC -2·5 -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 3. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 SAS135AD IC - Collector Current - A -1·0 -0·1 BD896 BD898 BD900 BD902 -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C TIS130AB Figure 5. 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5