BDT60B-S

BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDT60 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDT60A V CBO BDT60C -120 -60 BDT60B V CEO BDT60C Emitter-base voltage -80 -100 BDT60 BDT60A UNIT -60 E T E L O S B O BDT60B VALUE -80 -100 V V -120 VEBO -5 IC -4 A IB -0.1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 50 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Continuous collector current Continuous base current Operating junction temperature range Storage temperature range Operating free-air temperature range V Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
  
 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDT60 V(BR)CEO ICEO ICBO IEBO hFE V CE(sat) VBE(on) VEC Collector-emitter TYP MAX BDT60A -80 BDT60B -100 BDT60C -120 V IC = -30 mA IB = 0 VCE = -30 V IB = 0 BDT60 -0.5 Collector-emitter VCE = -40 V IB = 0 BDT60A -0.5 cut-off current VCE = -50 V IB = 0 BDT60B -0.5 breakdown voltage (see Note 3) VCE = -60 V IB = 0 BDT60C -0.5 VCB = -60 V IE = 0 BDT60 -0.2 VCB = -80 V IE = 0 BDT60A -0.2 VCB = -100 V IE = 0 BDT60B -0.2 Collector cut-off VCB = -120 V IE = 0 BDT60C -0.2 current VCB = -30 V IE = 0 TC = 150°C BDT60 -2.0 VCB = -40 V IE = 0 TC = 150°C BDT60A -2.0 VCB = -50 V IE = 0 TC = 150°C BDT60B -2.0 VCB = -60 V IE = 0 TC = 150°C BDT60C -2.0 VEB = -5 V IC = 0 VCE = -3 V IC = -1.5 A (see Notes 3 and 4) -6 mA IC = -1.5 A -3 V IC = -1.5 A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VCE = IE = -1.5 A mA mA -5 mA (see Notes 3 and 4) -2.5 V (see Notes 3 and 4) -2.5 V -2.0 V E T E L O S B O IB = UNIT -60 750 IB = 0 NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -2 A IB(on) = -8 mA IB(off) = 8 mA toff Turn-off time VBE(off) = 5 V RL = 20 Ω tp = 20 µs, dc ≤ 2% 1 µs 4.5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS115AD 20000 TC = -40°C TC = 25°C TC = 100°C 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 1000 -1·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 -1·0 -0·5 E T E L O S B O VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 TCS115AB -2·0 -5·0 0 -0·5 IC - Collector Current - A -1·0 TC = -40°C TC = 25°C TC = 100°C -5·0 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS115AC VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·5 TC = -40°C TC = 25°C TC = 100°C -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -5·0 IC - Collector Current - A Figure 3.
  
 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS115AB -1·0 -0·1 BDT60 BDT60A BDT60B BDT60C E T E L O S B O -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS110AA Ptot - Maximum Power Dissipation - W 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.