BDT61C-S

BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDT61 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDT61A V CBO BDT61C 120 60 BDT61B V CEO BDT61C Emitter-base voltage 80 100 BDT61 BDT61A UNIT 60 E T E L O S B O BDT61B VALUE 80 100 V V 120 VEBO 5 IC 4 A IB 0.1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 50 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Continuous collector current Continuous base current Operating junction temperature range Storage temperature range Operating free-air temperature range V Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
  
 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDT61 V(BR)CEO ICEO ICBO IEBO hFE V CE(sat) VBE(on) VEC Collector-emitter TYP MAX BDT61A 80 BDT61B 100 BDT61C 120 V IC = 30 mA IB = 0 VCE = 30 V IB = 0 BDT61 0.5 Collector-emitter VCE = 40 V IB = 0 BDT61A 0.5 cut-off current VCE = 50 V IB = 0 BDT61B 0.5 breakdown voltage (see Note 3) VCE = 60 V IB = 0 BDT61C 0.5 VCB = 60 V IE = 0 BDT61 0.2 VCB = 80 V IE = 0 BDT61A 0.2 VCB = 100 V IE = 0 BDT61B 0.2 Collector cut-off VCB = 120 V IE = 0 BDT61C 0.2 current VCB = 30 V IE = 0 TC = 150°C BDT61 2.0 VCB = 40 V IE = 0 TC = 150°C BDT61A 2.0 VCB = 50 V IE = 0 TC = 150°C BDT61B 2.0 VCB = 60 V IE = 0 TC = 150°C BDT61C 2.0 VEB = 5V IC = 0 VCE = 3V IC = 1.5 A (see Notes 3 and 4) 6 mA IC = 1.5 A 3V IC = 1.5 A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VCE = IE = 1.5 A mA mA 5 mA (see Notes 3 and 4) 2.5 V (see Notes 3 and 4) 2.5 V 2 V E T E L O S B O IB = UNIT 60 750 IB = 0 NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 2 A IB(on) = 8 mA IB(off) = -8 mA toff Turn-off time VBE(off) = -5 V RL = 20 Ω tp = 20 µs, dc ≤ 2% 1 µs 4.5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS110AD 20000 TC = -40°C TC = 25°C TC = 100°C 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 1000 1·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 0·5 E T E L O S B O VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 TCS110AB 2·0 5·0 0 0·5 IC - Collector Current - A 1·0 TC = -40°C TC = 25°C TC = 100°C 5·0 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS110AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 5·0 IC - Collector Current - A Figure 3.
  
 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS110AB 1·0 0·1 BDT61 BDT61A BDT61B BDT61C E T E L O S B O 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS110AA Ptot - Maximum Power Dissipation - W 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.