BDV64A

BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDV64 Collector-base voltage (IE = 0) BDV64A BDV64B BDV64C BDV64 Collector-emitter voltage (IB = 0) BDV64A BDV64B BDV64C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VEBO IC ICM IB Ptot Ptot Tj Tstg TL VCEO V CBO SYMBOL VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -12 -15 -0.5 125 3.5 -65 to +150 -65 to +150 260 V A A A W W °C °C °C V V UNIT JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDV64 V(BR)CEO IC = -30 mA IB = 0 (see Note 4) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -30 V VCB = -40 V VCB = -50 V VCB = -60 V IEBO hFE VCE(sat) VBE VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IE = -5 V -4 V -20 mA -4 V -10 A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -5 A IC = -5 A IC = -5 A IB = 0 (see Notes 4 and 5) (see Notes 4 and 5) (see Notes 4 and 5) (see Notes 4 and 5) 1000 -2 -2.5 -3.5 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C MIN -60 -80 -100 -120 -2 -2 -2 -2 -0.4 -0.4 -0.4 -0.4 -2 -2 -2 -2 -5 mA mA mA V TYP MAX UNIT NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1 35.7 UNIT °C/W °C/W 2 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 10000 TCS145AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 TCS145AE hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 1000 -1·0 -0·5 TC = -40°C TC = 25°C TC = 100°C 0 -0·5 -1·0 IC - Collector Current - A -10 -20 VCE = -4 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 -20 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C -2·5 TC = 100°C TCS145AF -2·0 -1·0 -1·5 -0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0 -0·5 -1·0 IC - Collector Current - A -10 -20 Figure 3. JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 140 Ptot - Maximum Power Dissipation - W TIS140AA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15,2 14,7 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5