BDW23C-S

BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C ● 50 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 2 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW23 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDW23A V CBO 80 BDW23C 100 45 BDW23B V CEO BDW23C Emitter-base voltage 60 BDW23 BDW23A UNIT 45 E T E L O S B O BDW23B VALUE 60 80 V V 100 VEBO 5 IC 6 A IB 0.2 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 50 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Continuous collector current Continuous base current Operating junction temperature range Storage temperature range Operating free-air temperature range V Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
  
 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) VEC Collector-emitter TEST CONDITIONS MIN BDW23 45 BDW23A 60 BDW23B 80 BDW23C 100 TYP MAX V IC = 100 mA IB = 0 VCE = 30 V IB = 0 BDW23 0.5 Collector-emitter VCE = 30 V IB = 0 BDW23A 0.5 cut-off current VCE = 40 V IB = 0 BDW23B 0.5 breakdown voltage (see Note 3) VCE = 50 V IB = 0 BDW23C 0.5 VCB = 45 V IE = 0 BDW23 0.2 Collector cut-off VCB = 60 V IE = 0 BDW23A 0.2 current VCB = 80 V IE = 0 BDW23B 0.2 VCB = 100 V IE = 0 BDW23C 0.2 VEB = 5V IC = 0 VCE = 3V IC = 1A VCE = 3V IC = 2A VCE = 3V IC = 6A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage 2 8 mA IC = 2A IB = 60 mA IC = 6A IB = 8 mA IC = 2A VCE = 3V IC = 1A VCE = 3V IC = 6A IE = 2A IB = 0 mA mA mA 1000 (see Notes 3 and 4) 750 20000 100 E T E L O S B O IB = UNIT 2 (see Notes 3 and 4) 3 (see Notes 3 and 4) V 2.5 2.5 (see Notes 3 and 4) 3 1.8 V V NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1 µs toff Turn-off time VBE(off) = -4.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
 2 TYP  
 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS120AD 40000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 1·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 0·5 E T E L O S B O VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 TCS120AE 2·0 10 0 0·5 IC - Collector Current - A 1·0 TC = -40°C TC = 25°C TC = 100°C 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS120AF VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3.
  
 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS120AB IC - Collector Current - A DC Operation tp = 300 µs, d = 0.1 = 10% 10 1·0 BDW23 BDW23A BDW23B BDW23C E T E L O S B O 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS110AA Ptot - Maximum Power Dissipation - W 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.