BDW24A-S

BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW23, BDW23A, BDW23B and BDW23C ● 50 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 2 A, 3 V This series is currently available, but not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW24 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDW24A BDW24B V CBO -60 -80 BDW24C -100 BDW24 -45 BDW24A BDW24B UNIT -45 V CEO BDW24C Emitter-base voltage VALUE -60 -80 V V -100 VEBO -5 Continuous collector current IC -6 A Continuous base current IB -0.2 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 50 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating junction temperature range Storage temperature range Operating free-air temperature range V Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
  
 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) VEC Collector-emitter TEST CONDITIONS MIN -45 BDW24A -60 BDW24B -80 BDW24C -100 TYP MAX IC = -100 mA IB = 0 VCE = -30 V IB = 0 BDW24 -0.5 Collector-emitter VCE = -30 V IB = 0 BDW24A -0.5 cut-off current VCE = -40 V IB = 0 BDW24B -0.5 breakdown voltage (see Note 3) BDW24 V VCE = -50 V IB = 0 BDW24C -0.5 VCB = -45 V IE = 0 BDW24 -0.2 Collector cut-off VCB = -60 V IE = 0 BDW24A -0.2 current VCB = -80 V IE = 0 BDW24B -0.2 VCB = -100 V IE = 0 BDW24C -0.2 VEB = -5 V IC = 0 Emitter cut-off current Forward current transfer ratio -2 VCE = -3 V IC = -1 A VCE = -3 V IC = -2 A VCE = -3 V IC = -6 A Collector-emitter IB = -8 mA IC = -2 A saturation voltage IB = -60 mA IC = -6 A IB = -8 mA IC = -2 A Base-emitter saturation voltage Base-emitter VCE = -3 V IC = -1 A voltage VCE = -3 V IC = -6 A IE = -2 A IB = 0 Parallel diode forward voltage UNIT mA mA mA 1000 (see Notes 3 and 4) 750 20000 100 -2 (see Notes 3 and 4) -3 (see Notes 3 and 4) -2.5 -2.5 (see Notes 3 and 4) -3 -1.8 V V V V NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -3 A IB(on) = -12 mA IB(off) = 12 mA 1 µs toff Turn-off time VBE(off) = 4.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS125AD 40000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 TCS125AE -2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 -1·0 -0·5 -10 TC = -40°C TC = 25°C TC = 100°C 0 -0·5 IC - Collector Current - A -1·0 -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS125AF VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·0 TC = -40°C TC = 25°C TC = 100°C -2·5 -1·0 -1·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -10 IC - Collector Current - A Figure 3.
  
 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS125AB IC - Collector Current - A DC Operation tp = 300 µs, d = 0.1 = 10% -10 -1·0 BDW24 BDW24A BDW24B BDW24C -0·1 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS110AA Ptot - Maximum Power Dissipation - W 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.