BDW53D-S

BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW53A Collector-base voltage (IE = 0) E T E L O S B O BDW53B V CBO BDW53D 120 BDW53 45 V CEO BDW53C BDW53D Emitter-base voltage 80 100 BDW53B UNIT 60 BDW53C BDW53A Collector-emitter voltage (IB = 0) (see Note 1) VALUE 45 BDW53 V 60 80 V 100 120 VEBO 5 IC 4 A IB 50 mA Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 40 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC2 25 mJ Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Continuous collector current Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(on) VCE(sat) VEC Collector-emitter breakdown voltage Collector-emitter cut-off current TEST CONDITIONS IC = 30 mA IB = 0 MIN (see Note 5) BDW53 45 BDW53A 60 BDW53B 80 BDW53C 100 BDW53D 120 TYP MAX V VCE = 30 V IB = 0 BDW53 0.5 VCE = 30 V IB = 0 BDW53A 0.5 VCE = 40 V IB = 0 BDW53B 0.5 VCE = 50 V IB = 0 BDW53C 0.5 VCE = 60 V IB = 0 BDW53D 0.5 VCB = 45 V IE = 0 BDW53 0.2 VCB = 60 V IE = 0 BDW53A 0.2 VCB = 80 V IE = 0 BDW53B 0.2 VCB = 100 V IE = 0 BDW53C 0.2 Collector cut-off VCB = 120 V IE = 0 BDW53D 0.2 current VCB = 45 V IE = 0 TC = 150°C BDW53 5 VCB = 60 V IE = 0 TC = 150°C BDW53A 5 VCB = 80 V IE = 0 TC = 150°C BDW53B 5 VCB = 100 V IE = 0 TC = 150°C BDW53C 5 VCB = 120 V IE = 0 TC = 150°C BDW53D 5 VEB = 5V IC = 0 VCE = 3V IC = 1.5 A VCE = 3V IC = VCE = 3V IC = 1.5 A IB = 30 mA IC = 1.5 A IB = 40 mA IC = Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage E T E L O S B O IE = 4A 4A 4A 2 750 (see Notes 5 and 6) UNIT mA mA mA 20000 100 (see Notes 5 and 6) 2.5 2.5 (see Notes 5 and 6) 4 IB = 0 3.5 V V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN TYP MAX UNIT 3.125 °C/W 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 2 A IB(on) = 8 mA IB(off) = -8 mA toff Turn-off time VBE(off) = -5 V RL = 15 Ω tp = 20 µs, dc ≤ 2% 1 µs 4.5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
 2 TYP  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS110AD 20000 TC = -40°C TC = 25°C TC = 100°C 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 1000 1·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 0·5 E T E L O S B O VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 TCS110AB 2·0 5·0 0 0·5 IC - Collector Current - A 1·0 TC = -40°C TC = 25°C TC = 100°C 5·0 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS110AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 5·0 IC - Collector Current - A Figure 3.
  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS110AC 1·0 0·1 BDW53 BDW53A BDW53B BDW53C BDW53D E T E L O S B O 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS110AB Ptot - Maximum Power Dissipation - W 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
 4  
 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.