BDW64A

BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) ● ● ● 1 2 3 6 A Continuous Collector Current Minimum hFE of 750 at 3V, 2 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW64 BDW64A Collector-base voltage (IE = 0) BDW64B BDW64C BDW64D BDW64 BDW64A Collector-emitter voltage (IB = 0) (see Note 1) BDW64B BDW64C BDW64D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -6 -0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = - 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW64 V(BR)CEO Collector-emitter breakdown voltage BDW64A IC = -30 mA IB = 0 (see Note 5) BDW64B BDW64C BDW64D VCE = -30 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -40 V VCE = -50 V VCE = -60 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V VCB = -120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = VCE = VCE = IB = IB = IE = -5 V -3 V -3 V -3 V -12 mA -60 mA -6 A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -2 A IC = -6 A IC = -2 A IC = -2 A IC = -6 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 -2.5 -2.5 -4 -3.5 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW64 BDW64A BDW64B BDW64C BDW64D BDW64 BDW64A BDW64B BDW64C BDW64D BDW64 BDW64A BDW64B BDW64C BDW64D MIN -45 -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -0.2 -5 -5 -5 -5 -5 -2 20000 mA mA mA V TYP MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.08 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -3 A VBE(off) = 4.5 V IB(on) = -12 mA RL = 1 0 Ω † MIN IB(off) = 12 mA tp = 20 µs, dc ≤ 2% TYP 1 5 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 40000 TCS125AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 TCS125AE hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 -1·0 1000 -0·5 TC = -40°C TC = 25°C TC = 100°C 0 -0·5 -1·0 IC - Collector Current - A -10 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C TCS125AF -2·0 -2·5 -1·0 -1·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 SAS125AC IC - Collector Current - A -1·0 BDW64 BDW64A BDW64B BDW64C BDW64D -0·1 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C TIS120AB Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP