BDW74

BDW74

  • 厂商:

    BOURNS(伯恩斯)

  • 封装:

  • 描述:

    BDW74 - PNP SILICON POWER DARLINGTONS - Bourns Electronic Solutions

  • 详情介绍
  • 数据手册
  • 价格&库存
BDW74 数据手册
BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D 80 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) ● ● ● 1 2 3 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW74 BDW74A Collector-base voltage (IE = 0) BDW74B BDW74C BDW74D BDW74 BDW74A Collector-emitter voltage (IB = 0) (see Note 1) BDW74B BDW74C BDW74D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -8 -0.3 80 2 75 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = - 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW74 V(BR)CEO Collector-emitter breakdown voltage BDW74A IC = -30 mA IB = 0 (see Note 5) BDW74B BDW74C BDW74D VCE = -30 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -40 V VCE = -50 V VCE = -60 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V VCB = -120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = VCE = VCE = IB = IB = IE = -5 V -3 V -3 V -3 V -12 mA -80 mA -8 A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -3 A IC = -8 A IC = -3 A IC = -3 A IC = -8 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 -2.5 -2.5 -4 -3.5 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW74 BDW74A BDW74B BDW74C BDW74D BDW74 BDW74A BDW74B BDW74C BDW74D BDW74 BDW74A BDW74B BDW74C BDW74D MIN -45 -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -0.2 -5 -5 -5 -5 -5 -2 20000 mA mA mA V TYP MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.56 62.5 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -3 A VBE(off) = 3.5 V IB(on) = -12 mA RL = 1 0 Ω † MIN IB(off) = 12 mA tp = 20 µs, dc ≤ 2% TYP 1 5 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS135AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 TCS135AB hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 -1·5 1000 -1·0 VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -10 TC = -40°C TC = 25°C TC = 100°C -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C TCS135AC -2·5 -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 IC - Collector Current - A -10 Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 SAS135AF IC - Collector Current - A -1·0 -0·1 BDW74 BDW74A BDW74B BDW74C BDW74D -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum Power Dissipation - W TIS130AA 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP
BDW74
### 物料型号 - BDW74, BDW74A, BDW74B, BDW74C, BDW74D

### 器件简介 BDW74系列是PNP硅功率达林顿晶体管,设计用于与BDW73系列互补使用。它们具有80W在25°C的壳温下、8A的连续集电极电流、最小hFE为750在3V、3A条件下的特性。

### 引脚分配 - Pin 2与安装底座电气连接。

### 参数特性 - 绝对最大额定值:包括集电极-基极电压(VCBO)、发射极-基极电压(VEBO)、连续集电极电流(Ic)、连续基极电流(IB)等。 - 电气特性:在25°C的壳温下,包括直流电流增益(hFE)、集电极-发射极饱和电压(VCE(sat))等。 - 热特性:包括结到壳的热阻(RθJC)和结到自由空气的热阻(RθJA)。 - 电阻负载开关特性:包括开通时间(ton)和关断时间(toff)。

### 功能详解 BDW74系列晶体管适用于高功率开关和放大应用,具有高电流增益和大电流处理能力。它们能够在高达80W的功率下工作,并具有较高的连续集电极电流额定值。

### 应用信息 这些晶体管通常用于需要高功率和高电流的应用,如电源开关、电机控制和高电流放大器。

### 封装信息 - TO-220 3引脚塑料法兰安装封装。 - 该封装由电路安装在引线框架上并封装在塑料化合物内,能够在不变形的情况下承受焊接温度,并且在高湿度条件下运行时电路性能特性保持稳定。 - 引脚不需要额外清洁或处理即可用于焊接组装。
BDW74 价格&库存

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